TY - JOUR
T1 - Dielectric temperature stability and energy storage performance of B-site Sn4+-doped BNKBST ceramics
AU - Dong, Guangzhi
AU - Fan, Huiqing
AU - Jia, Yuxin
AU - Liu, Huan
N1 - Publisher Copyright:
© 2020, Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2020/8/1
Y1 - 2020/8/1
N2 - The 0.65Bi0.5Na0.25K0.25TiO3–0.35Bi0.2Sr0.7Ti1−xSnxO3 (BNKBST-xSn) ceramics were synthesized via a solid-phase reactive sintering technique. The effects of doping Sn4+ ions on the energy storage, dielectric, ferroelectric properties and microstructure characteristics for BNKBST ceramics were systematically studied. Remarkably, BNKBST-0.02Sn exhibits a superior dielectric temperature stability, manifested as the change rate for dielectric constant ∆ε/ε150°C is smaller than 15% during a very wide temperature range of 30–400 °C. In addition, BNKBST-0.02Sn ceramic achieves a high energy storage density Wrec = 0.81 J/cm3 (under the electric field 80 kV/cm) with an outstanding energy storage efficiency 89.5%, which make it reasonable to be applied in dielectric capacitors due to its excellent dielectric thermal stability and energy storage properties. The electrical conductivity behaviors of BNKBST-xSn were also analyzed with the assistance of impedance spectroscopy.
AB - The 0.65Bi0.5Na0.25K0.25TiO3–0.35Bi0.2Sr0.7Ti1−xSnxO3 (BNKBST-xSn) ceramics were synthesized via a solid-phase reactive sintering technique. The effects of doping Sn4+ ions on the energy storage, dielectric, ferroelectric properties and microstructure characteristics for BNKBST ceramics were systematically studied. Remarkably, BNKBST-0.02Sn exhibits a superior dielectric temperature stability, manifested as the change rate for dielectric constant ∆ε/ε150°C is smaller than 15% during a very wide temperature range of 30–400 °C. In addition, BNKBST-0.02Sn ceramic achieves a high energy storage density Wrec = 0.81 J/cm3 (under the electric field 80 kV/cm) with an outstanding energy storage efficiency 89.5%, which make it reasonable to be applied in dielectric capacitors due to its excellent dielectric thermal stability and energy storage properties. The electrical conductivity behaviors of BNKBST-xSn were also analyzed with the assistance of impedance spectroscopy.
UR - http://www.scopus.com/inward/record.url?scp=85087739865&partnerID=8YFLogxK
U2 - 10.1007/s10854-020-03918-2
DO - 10.1007/s10854-020-03918-2
M3 - 文章
AN - SCOPUS:85087739865
SN - 0957-4522
VL - 31
SP - 13620
EP - 13627
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 16
ER -