Design and analysis of novel field plate-trench composite anode terminal in high-voltage Ga₂O₃ Schottky Barrier diode

To improve the breakdown voltage of Ga₂O₃ vertical Schottky Barrier diode (SBD), this article innovatively proposes a novel field plate-trench composite structure. Different from the traditional field plate structures and trench structures, the proposed composite structure innovatively adds a shallow trench under the field plate structure, greatly reducing the depth of the trench and relieving the etching difficulty. At the same time, simulation results show that the field plate-shallow trench composite structure can increase the breakdown voltage of the device from 543 V to 952 V, which is nearly 1.76 times higher than that of traditional devices. The new field plate-trench composite structure greatly improves the breakdown voltage of Ga₂O₃ vertical SBD, while also increasing the forward characteristics and the reliability of the device, having superiority in size, and alleviating the difficulty of the process. Our research work also has guiding significance for the research of other wide bandgap power devices.