Defect etching of near-infrared semiconductor HgInTe

The defect etching technique of HgInTe was investigated and a new etchant for HgInTe was obtained. The etching mechanism was theoretically analyzed. The defects and their distribution in HgInTe were revealed from the etching patterns. The experimental results show that the etch-pit shape of HgInTe wafer perpendicular to axial direction is similar to isosceles triangle. The etch-pit density (EPD) is in the order of 10⁵/cm². The dislocation wall of HgInTe was comprised in the ways of side overlap and angle overlap. There exist some microcracks in HgInTe resulting from residual stress.