Defect etching of infrared semiconductor HgMnTe

The electronic properties of narrow gap 2-5 compounds containing Hg are dominated by defects. The etch-pit density (EPD) is one of the important reference parameter frequently used in the studies of the electronic properties of defects. Based on the mechanics of etching, we study the etching process of HgMnTe, and find out an etch appropriate for HgMnTe. Experimental results show that this etch can reveal different defects on different surfaces, such as dislocations, grain boundaries, twins, inclusions and precipitation, etc. , and the etched surfaces are in high qualities. Holding this in hand, we also analyze the shape and distribution of defects in the HgMnTe crystals grown by ACRT and Bridgman methods.