TY - JOUR
T1 - CVT growth and optical properties of Cr,Fe:ZnSe single crystals for mid-infrared laser applications
AU - Zhang, Tingting
AU - Zhu, Guanrong
AU - Zhang, Guorong
AU - Wei, Yucheng
AU - Liu, Changyou
AU - Jie, Wanqi
N1 - Publisher Copyright:
© 2025 Elsevier Ltd
PY - 2025/10
Y1 - 2025/10
N2 - At present, the research of transition metal ions doped ZnSe (TM:ZnSe) materials is confronted with the uneven TM-doping and the difficulty of growing high-quality single crystals. In this work, Cr,Fe:ZnSe single crystals with expected elemental doping concentrations were grown at lower temperature by the CVT method using NH4Cl as a transport agent. The UV–VIS–NIR absorption spectrum shows that the concentrations of Cr2+ and Fe2+ ions are 9.61 × 1018 cm−3 and 1.45 × 1019 cm−3, respectively. The element doping efficiency is as high as 96–97 %. Compared with other doping methods, the CVT method can effectively control the doping concentrations of Cr and Fe elements of the as-grown Cr,Fe:ZnSe single crystals, the ratio between which is also very close to the design value. The XPS results demonstrate that the Cr and Fe elements are mainly present as Cr2+ and Fe2+ ions in the Cr,Fe:ZnSe single crystals. The fluorescence spectra under 1770 nm excitation at room temperature show a luminescence peak at about 3400–4900 nm resulting from the energy transfer between Cr2+ and Fe2+ ions. Based on the fluorescence decay lifetime, the energy transfer process can be explained by a non-radiative energy transfer mechanism. The maximum intensity ratio of the luminescence peaks of Fe2+ and Cr2+ ions is about 1:2, and the ratio of the emission peak areas of Fe2+ and Cr2+ ions is 0.852, which indicating that the energy transfer process is more effective. The fluorescence lifetimes of Cr,Fe:ZnSe single crystals at 2200 nm and 4400 nm are 6.3 μs and 6.5 μs, and the emission cross sections are calculated to be 2.02 × 10−18 cm2 and 1.80 × 10−17 cm2, respectively. Therefore, it is believed that the unintentional doping of Cl− ions has no obvious effect on the optical and luminescent properties of the as-grown crystals.
AB - At present, the research of transition metal ions doped ZnSe (TM:ZnSe) materials is confronted with the uneven TM-doping and the difficulty of growing high-quality single crystals. In this work, Cr,Fe:ZnSe single crystals with expected elemental doping concentrations were grown at lower temperature by the CVT method using NH4Cl as a transport agent. The UV–VIS–NIR absorption spectrum shows that the concentrations of Cr2+ and Fe2+ ions are 9.61 × 1018 cm−3 and 1.45 × 1019 cm−3, respectively. The element doping efficiency is as high as 96–97 %. Compared with other doping methods, the CVT method can effectively control the doping concentrations of Cr and Fe elements of the as-grown Cr,Fe:ZnSe single crystals, the ratio between which is also very close to the design value. The XPS results demonstrate that the Cr and Fe elements are mainly present as Cr2+ and Fe2+ ions in the Cr,Fe:ZnSe single crystals. The fluorescence spectra under 1770 nm excitation at room temperature show a luminescence peak at about 3400–4900 nm resulting from the energy transfer between Cr2+ and Fe2+ ions. Based on the fluorescence decay lifetime, the energy transfer process can be explained by a non-radiative energy transfer mechanism. The maximum intensity ratio of the luminescence peaks of Fe2+ and Cr2+ ions is about 1:2, and the ratio of the emission peak areas of Fe2+ and Cr2+ ions is 0.852, which indicating that the energy transfer process is more effective. The fluorescence lifetimes of Cr,Fe:ZnSe single crystals at 2200 nm and 4400 nm are 6.3 μs and 6.5 μs, and the emission cross sections are calculated to be 2.02 × 10−18 cm2 and 1.80 × 10−17 cm2, respectively. Therefore, it is believed that the unintentional doping of Cl− ions has no obvious effect on the optical and luminescent properties of the as-grown crystals.
KW - Cr,Fe:ZnSe crystal
KW - CVT
KW - Energy transfer
KW - Mid-infrared laser materials
KW - Single crystal growth
UR - http://www.scopus.com/inward/record.url?scp=105002904176&partnerID=8YFLogxK
U2 - 10.1016/j.optlastec.2025.113003
DO - 10.1016/j.optlastec.2025.113003
M3 - 文章
AN - SCOPUS:105002904176
SN - 0030-3992
VL - 188
JO - Optics and Laser Technology
JF - Optics and Laser Technology
M1 - 113003
ER -