TY - JOUR
T1 - Construction of Heterogenous S-C-S MoS2/SnS2/r-GO Heterojunction for Efficient CO2 Photoreduction
AU - Yin, Shikang
AU - Li, Jinze
AU - Sun, Linlin
AU - Li, Xin
AU - Shen, Dong
AU - Song, Xianghai
AU - Huo, Pengwei
AU - Wang, Huiqin
AU - Yan, Yongsheng
N1 - Publisher Copyright:
Copyright © 2019 American Chemical Society.
PY - 2019/11/18
Y1 - 2019/11/18
N2 - Photocatalytic reduction of CO2 by semiconductors is of great significance in generating value-added fuels. Here, we construct a novel S-C-S heterojunction constituted of MoS2/SnS2/r-GO by a simple solvothermal method. The prepared MoS2/SnS2/r-GO showed significant photoexcitation of photosensitive oxygen (ROS) by electron spin resonance spectroscopy, demonstrating that superoxide radicals (•O2 -), pores, and hydroxyl radicals (•OH) are the main active species. The constructed S-C-S heterojunction has a multilevel electron transport mechanism and synergistic effect, which provides the possibility of producing more organic fuel. The photocatalytic materials were characterized by XRD, XPS, SEM, TEM, PL, etc. As a result, the atomic layer MoS2/SnS2/r-GO heterojunction exhibited a CO formation rate of 68.53 μmol g-1 h-1 and a CH4 formation rate of 50.55 μmol g-1 h-1, respectively. This work opens up new prospects for the formation of heterojunctions of chalcogenide transition-metal sulfides.
AB - Photocatalytic reduction of CO2 by semiconductors is of great significance in generating value-added fuels. Here, we construct a novel S-C-S heterojunction constituted of MoS2/SnS2/r-GO by a simple solvothermal method. The prepared MoS2/SnS2/r-GO showed significant photoexcitation of photosensitive oxygen (ROS) by electron spin resonance spectroscopy, demonstrating that superoxide radicals (•O2 -), pores, and hydroxyl radicals (•OH) are the main active species. The constructed S-C-S heterojunction has a multilevel electron transport mechanism and synergistic effect, which provides the possibility of producing more organic fuel. The photocatalytic materials were characterized by XRD, XPS, SEM, TEM, PL, etc. As a result, the atomic layer MoS2/SnS2/r-GO heterojunction exhibited a CO formation rate of 68.53 μmol g-1 h-1 and a CH4 formation rate of 50.55 μmol g-1 h-1, respectively. This work opens up new prospects for the formation of heterojunctions of chalcogenide transition-metal sulfides.
UR - http://www.scopus.com/inward/record.url?scp=85074895193&partnerID=8YFLogxK
U2 - 10.1021/acs.inorgchem.9b02676
DO - 10.1021/acs.inorgchem.9b02676
M3 - 文章
C2 - 31697484
AN - SCOPUS:85074895193
SN - 0020-1669
VL - 58
SP - 15590
EP - 15601
JO - Inorganic Chemistry
JF - Inorganic Chemistry
IS - 22
ER -