TY - GEN
T1 - Close-space sublimation growth and characterization of ZnTe epitaxial thick film
AU - Li, Jiawei
AU - Zha, Gangqiang
AU - Xu, Yadong
AU - Xi, Shouzhi
AU - Li, Yingrui
AU - Yang, Rui
AU - Jie, Wanqi
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/11/11
Y1 - 2015/11/11
N2 - ZnTe epitaxial film with thickness of 200μm was grown on the GaAs substrate by close-space sublimation (CSS). The surface topography of ZnTe film was analyzed by SEM, and the evolution of growth pit was observed, which revealed the mechanism of epitaxial growth. The structure was analyzed by X-ray radiation diffraction (XRD) θ-2θ scan and rotary φ-scan, and the results suggested that the ZnTe thick film is epitaxial film. The crystalline quality of ZnTe thick film was characterized by X-ray rocking curve and Raman spectrum, and the results suggested that ZnTe epitaxial film obtained by CSS could be as a replacement of ZnTe single crystal, especially for thinner and larger requirement.
AB - ZnTe epitaxial film with thickness of 200μm was grown on the GaAs substrate by close-space sublimation (CSS). The surface topography of ZnTe film was analyzed by SEM, and the evolution of growth pit was observed, which revealed the mechanism of epitaxial growth. The structure was analyzed by X-ray radiation diffraction (XRD) θ-2θ scan and rotary φ-scan, and the results suggested that the ZnTe thick film is epitaxial film. The crystalline quality of ZnTe thick film was characterized by X-ray rocking curve and Raman spectrum, and the results suggested that ZnTe epitaxial film obtained by CSS could be as a replacement of ZnTe single crystal, especially for thinner and larger requirement.
UR - http://www.scopus.com/inward/record.url?scp=84969141753&partnerID=8YFLogxK
U2 - 10.1109/IRMMW-THz.2015.7327667
DO - 10.1109/IRMMW-THz.2015.7327667
M3 - 会议稿件
AN - SCOPUS:84969141753
T3 - IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves
BT - IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015
Y2 - 23 August 2015 through 28 August 2015
ER -