@inproceedings{3b92b75e4e834b13994ff047235e6eda,
title = "Chemical vapor deposition (CVD) of ZrC coatings from ZrCl 4-C3H6-H2",
abstract = "ZrC coatings were prepared by CVD using ZrCl4, C 3H6, and H2 as the precursors. The mechanisms responsible for the effects of deposition temperature, H2 flow rate and inlet C/Zr ratio on the ZrC coatings were studied based on the deposition mechanism of ZrC. The results indicate that the ZrC morphologies change from a loose spherical structure to a cauliflower structure, then to a glassy structure as the deposition temperature increases from 1050°C to 1150°C, then to 1250°C. The carbon content in the ZrC coatings increases with increasing the deposition temperature. Higher inlet C/Zr ratio can lead to rough surfaces and higher carbon content. Reasonable H2 concentration can inhibit carbon deposition, and lead to a cauliflower structure.",
keywords = "Chemical vapor deposition, Mechanism, Surface morphology, Zirconium carbide",
author = "Liu, {Qiao Mu} and Zhang, {Li Tong} and Meng, {Zhi Xin} and Cheng, {Lai Fei}",
year = "2011",
doi = "10.4028/www.scientific.net/AMR.189-193.648",
language = "英语",
isbn = "9783037850312",
series = "Advanced Materials Research",
pages = "648--652",
booktitle = "Manufacturing Process Technology",
note = "2nd International Conference on Manufacturing Science and Engineering, ICMSE 2011 ; Conference date: 09-04-2011 Through 11-04-2011",
}