TY - JOUR
T1 - Characterization of Electromigration-induced degradation in Micro Bumps Via On-Chip Embedded Temperature Sensors Under High Current Density
AU - Pu, Zhenwen
AU - Wang, Yuexing
AU - Cao, Linwei
AU - Qiao, Jichao
AU - Sun, Xiangyu
N1 - Publisher Copyright:
© 2011-2012 IEEE.
PY - 2025
Y1 - 2025
N2 - This study investigates electromigration-induced degradation in micro bumps through an integrated experimental and computational approach. Platinum thin-film temperature sensors were embedded within flip-chip specimens to enable real-time thermal monitoring. Internal package temperatures were measured using these sensors, with validation via infrared thermography, to quantitatively characterize Joule heating effects under high-current-density conditions. Cross-sectional SEM analysis of specimens subjected to accelerated current stressing revealed that electromigration drives two concurrent failure mechanisms in electro-thermal coupling environments: (1) void nucleation-propagating along IMC/solder boundaries, and (2) necking caused by accelerated solder consumption. A multi-physics modeling framework combining unified creep plasticity (UCP) constitutive laws with the J-integral fracture mechanics method was developed to simulate shear deformation evolution in micro bumps containing electromigration-induced voids. Computational results demonstrated that void propagation disrupts hydrostatic stress uniformity, inducing localized stress concentrations near solder-depleted regions. Crucially, solder consumption-induced voids exhibited higher stress intensification compared to IMC-interface voids, establishing a direct correlation between void topology and mechanical reliability degradation.
AB - This study investigates electromigration-induced degradation in micro bumps through an integrated experimental and computational approach. Platinum thin-film temperature sensors were embedded within flip-chip specimens to enable real-time thermal monitoring. Internal package temperatures were measured using these sensors, with validation via infrared thermography, to quantitatively characterize Joule heating effects under high-current-density conditions. Cross-sectional SEM analysis of specimens subjected to accelerated current stressing revealed that electromigration drives two concurrent failure mechanisms in electro-thermal coupling environments: (1) void nucleation-propagating along IMC/solder boundaries, and (2) necking caused by accelerated solder consumption. A multi-physics modeling framework combining unified creep plasticity (UCP) constitutive laws with the J-integral fracture mechanics method was developed to simulate shear deformation evolution in micro bumps containing electromigration-induced voids. Computational results demonstrated that void propagation disrupts hydrostatic stress uniformity, inducing localized stress concentrations near solder-depleted regions. Crucially, solder consumption-induced voids exhibited higher stress intensification compared to IMC-interface voids, establishing a direct correlation between void topology and mechanical reliability degradation.
KW - Electromigration
KW - Intermetallic Compounds
KW - Micro bumps
KW - Unified Creep Plasticity Model
UR - http://www.scopus.com/inward/record.url?scp=105006828193&partnerID=8YFLogxK
U2 - 10.1109/TCPMT.2025.3574203
DO - 10.1109/TCPMT.2025.3574203
M3 - 文章
AN - SCOPUS:105006828193
SN - 2156-3950
JO - IEEE Transactions on Components, Packaging and Manufacturing Technology
JF - IEEE Transactions on Components, Packaging and Manufacturing Technology
M1 - 0b00006493fc5d3c
ER -