摘要
Memristors are new type of circuit element with the characteristics of both integrated computing and storage, which can promote the development of artificial intelligence and memory- computing fusion technology. In this manuscript, a novel triple cation Organic-inorganic hybrid perovskite (OHP) based optoelectronic coupling memristors with structure of FTO/TiO2/Cs0.05(FAxMA1−x)0.95PbBryI3−y/Al were fabricated, hysteresis loops with low power consumption, high HRS/LRS ratio and obvious light response are presented. Besides, capacitive coupling behaviors are observed in current curves. By changing voltage or light condition, memristors can evolve from capacitive behavior to pure memristive behavior. Physical mechanisms are discussed to explain this phenomenon. This work opens up a way in improving the resistive switching performances of OHP memristors, and can be of great benefit to the potential application in neuromorphological analysis.
源语言 | 英语 |
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文章编号 | 159884 |
期刊 | Journal of Alloys and Compounds |
卷 | 874 |
DOI | |
出版状态 | 已出版 - 5 9月 2021 |