Capacitive coupling behaviors based on triple cation organic-inorganic hybrid perovskite memristor

Shaoxi Wang; Yuxuan Xiong; Xiangqi Dong; Jian Sha; Yupan Wu; Wei Li; Yucheng Wang

doi:10.1016/j.jallcom.2021.159884

Capacitive coupling behaviors based on triple cation organic-inorganic hybrid perovskite memristor

Shaoxi Wang, Yuxuan Xiong, Xiangqi Dong, Jian Sha, Yupan Wu, Wei Li, Yucheng Wang

微电子学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

18 引用（Scopus）

摘要

Memristors are new type of circuit element with the characteristics of both integrated computing and storage, which can promote the development of artificial intelligence and memory- computing fusion technology. In this manuscript, a novel triple cation Organic-inorganic hybrid perovskite (OHP) based optoelectronic coupling memristors with structure of FTO/TiO₂/Cs_0.05(FA_xMA_1−x)_0.95PbBr_yI_3−y/Al were fabricated, hysteresis loops with low power consumption, high HRS/LRS ratio and obvious light response are presented. Besides, capacitive coupling behaviors are observed in current curves. By changing voltage or light condition, memristors can evolve from capacitive behavior to pure memristive behavior. Physical mechanisms are discussed to explain this phenomenon. This work opens up a way in improving the resistive switching performances of OHP memristors, and can be of great benefit to the potential application in neuromorphological analysis.

源语言	英语
文章编号	159884
期刊	Journal of Alloys and Compounds
卷	874
DOI	https://doi.org/10.1016/j.jallcom.2021.159884
出版状态	已出版 - 5 9月 2021

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title = "Capacitive coupling behaviors based on triple cation organic-inorganic hybrid perovskite memristor",

abstract = "Memristors are new type of circuit element with the characteristics of both integrated computing and storage, which can promote the development of artificial intelligence and memory- computing fusion technology. In this manuscript, a novel triple cation Organic-inorganic hybrid perovskite (OHP) based optoelectronic coupling memristors with structure of FTO/TiO2/Cs0.05(FAxMA1−x)0.95PbBryI3−y/Al were fabricated, hysteresis loops with low power consumption, high HRS/LRS ratio and obvious light response are presented. Besides, capacitive coupling behaviors are observed in current curves. By changing voltage or light condition, memristors can evolve from capacitive behavior to pure memristive behavior. Physical mechanisms are discussed to explain this phenomenon. This work opens up a way in improving the resistive switching performances of OHP memristors, and can be of great benefit to the potential application in neuromorphological analysis.",

keywords = "Capacitive behavior, Perovskite, Physical mechanism, memristor",

author = "Shaoxi Wang and Yuxuan Xiong and Xiangqi Dong and Jian Sha and Yupan Wu and Wei Li and Yucheng Wang",

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doi = "10.1016/j.jallcom.2021.159884",

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AU - Wang, Shaoxi

AU - Xiong, Yuxuan

AU - Dong, Xiangqi

AU - Sha, Jian

AU - Wu, Yupan

AU - Li, Wei

AU - Wang, Yucheng

PY - 2021/9/5

Y1 - 2021/9/5

N2 - Memristors are new type of circuit element with the characteristics of both integrated computing and storage, which can promote the development of artificial intelligence and memory- computing fusion technology. In this manuscript, a novel triple cation Organic-inorganic hybrid perovskite (OHP) based optoelectronic coupling memristors with structure of FTO/TiO2/Cs0.05(FAxMA1−x)0.95PbBryI3−y/Al were fabricated, hysteresis loops with low power consumption, high HRS/LRS ratio and obvious light response are presented. Besides, capacitive coupling behaviors are observed in current curves. By changing voltage or light condition, memristors can evolve from capacitive behavior to pure memristive behavior. Physical mechanisms are discussed to explain this phenomenon. This work opens up a way in improving the resistive switching performances of OHP memristors, and can be of great benefit to the potential application in neuromorphological analysis.

AB - Memristors are new type of circuit element with the characteristics of both integrated computing and storage, which can promote the development of artificial intelligence and memory- computing fusion technology. In this manuscript, a novel triple cation Organic-inorganic hybrid perovskite (OHP) based optoelectronic coupling memristors with structure of FTO/TiO2/Cs0.05(FAxMA1−x)0.95PbBryI3−y/Al were fabricated, hysteresis loops with low power consumption, high HRS/LRS ratio and obvious light response are presented. Besides, capacitive coupling behaviors are observed in current curves. By changing voltage or light condition, memristors can evolve from capacitive behavior to pure memristive behavior. Physical mechanisms are discussed to explain this phenomenon. This work opens up a way in improving the resistive switching performances of OHP memristors, and can be of great benefit to the potential application in neuromorphological analysis.

KW - Capacitive behavior

KW - Perovskite

KW - Physical mechanism

KW - memristor

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DO - 10.1016/j.jallcom.2021.159884

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Capacitive coupling behaviors based on triple cation organic-inorganic hybrid perovskite memristor

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