Buffer-layer-induced barrier reduction: Role of tunneling in organic light-emitting devices

S. T. Zhang, X. M. Ding, J. M. Zhao, H. Z. Shi, J. He, Z. H. Xiong, H. J. Ding, E. G. Obbard, Y. Q. Zhan, W. Huang, X. Y. Hou

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84 引用 (Scopus)

摘要

The current density-voltage (J-V) characteristics of organic light-emitting devices (OLED) having buffer layers based on the WKB approximation of the tunneling model were investigated. The turn-on voltage of the device was lowered by the insertion of an insulating buffer layer of proper thickness. Good buffer layer for electron injection was observed to have high resistivity and a low conduction band minimum (CBM) level. It was found that the quantitative estimation of the optimal buffer layer thickness was related to the thickness of the organic layer.

源语言英语
页(从-至)425-427
页数3
期刊Applied Physics Letters
84
3
DOI
出版状态已出版 - 19 1月 2004
已对外发布

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