TY - JOUR
T1 - Bridgman growth and defect characterization of large diameter mercury indium telluride crystals for near infrared detectors
AU - Wang, Linghang
AU - Jie, Wanqi
PY - 2013/1/1
Y1 - 2013/1/1
N2 - Novel Hg3In2Te6 (MIT) single crystals with 30 mm in diameter and 110 mm in length have been reproducibly grown by the vertical Bridgman (VB) method. The crystalline phase was confirmed by X-ray diffraction to be free of transformation. Rocking curves using a double-crystal X-ray diffractometer showed that the full widths at half maximum of the as-grown MIT crystals were in the range of 150-317 arc sec. The electrical resistivity, carrier density and mobility from Hall measurements at room temperature were 1.79×103 Ω cm, 1.01×1013 cm-3 and 3.44×102 cm2 V-1 s-1, respectively. The existing defects in the as-grown MIT crystals were displayed and the average etch pits density (EPD) using the modified Chen etchant solution was (2-6)×104 cm-2 in the whole ingot.
AB - Novel Hg3In2Te6 (MIT) single crystals with 30 mm in diameter and 110 mm in length have been reproducibly grown by the vertical Bridgman (VB) method. The crystalline phase was confirmed by X-ray diffraction to be free of transformation. Rocking curves using a double-crystal X-ray diffractometer showed that the full widths at half maximum of the as-grown MIT crystals were in the range of 150-317 arc sec. The electrical resistivity, carrier density and mobility from Hall measurements at room temperature were 1.79×103 Ω cm, 1.01×1013 cm-3 and 3.44×102 cm2 V-1 s-1, respectively. The existing defects in the as-grown MIT crystals were displayed and the average etch pits density (EPD) using the modified Chen etchant solution was (2-6)×104 cm-2 in the whole ingot.
KW - A1. X-ray diffraction
KW - A2. Crystal growth from melt
KW - A2. Vertical Bridgman method
KW - B2. Mercury indium telluride
KW - B3. Near-infrared photovoltaic detector
UR - http://www.scopus.com/inward/record.url?scp=84870299247&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2011.10.057
DO - 10.1016/j.jcrysgro.2011.10.057
M3 - 文章
AN - SCOPUS:84870299247
SN - 0022-0248
VL - 362
SP - 327
EP - 329
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -