Bridgman growth and defect characterization of large diameter mercury indium telluride crystals for near infrared detectors

Linghang Wang, Wanqi Jie

科研成果: 期刊稿件文章同行评审

2 引用 (Scopus)

摘要

Novel Hg3In2Te6 (MIT) single crystals with 30 mm in diameter and 110 mm in length have been reproducibly grown by the vertical Bridgman (VB) method. The crystalline phase was confirmed by X-ray diffraction to be free of transformation. Rocking curves using a double-crystal X-ray diffractometer showed that the full widths at half maximum of the as-grown MIT crystals were in the range of 150-317 arc sec. The electrical resistivity, carrier density and mobility from Hall measurements at room temperature were 1.79×103 Ω cm, 1.01×1013 cm-3 and 3.44×102 cm2 V-1 s-1, respectively. The existing defects in the as-grown MIT crystals were displayed and the average etch pits density (EPD) using the modified Chen etchant solution was (2-6)×104 cm-2 in the whole ingot.

源语言英语
页(从-至)327-329
页数3
期刊Journal of Crystal Growth
362
1
DOI
出版状态已出版 - 1 1月 2013

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