Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals

Yan Sun, Zishu Zhou, Zhen Huang, Jiangbin Wu, Liujiang Zhou, Yang Cheng, Jinqiu Liu, Chao Zhu, Maotao Yu, Peng Yu, Wei Zhu, Yue Liu, Jian Zhou, Bowen Liu, Hongguang Xie, Yi Cao, Hai Li, Xinran Wang, Kaihui Liu, Xiaoyong WangJianpu Wang, Lin Wang, Wei Huang

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摘要

To explore new constituents in two-dimensional (2D) materials and to combine their best in van der Waals heterostructures is in great demand as being a unique platform to discover new physical phenomena and to design novel functionalities in interface-based devices. Herein, PbI 2 crystals as thin as a few layers are synthesized, particularly through a facile low-temperature solution approach with crystals of large size, regular shape, different thicknesses, and high yields. As a prototypical demonstration of band engineering of PbI 2 -based interfacial semiconductors, PbI 2 crystals are assembled with several transition metal dichalcogenide monolayers. The photoluminescence of MoS 2 is enhanced in MoS 2 /PbI 2 stacks, while a dramatic photoluminescence quenching of WS 2 and WSe 2 is revealed in WS 2 /PbI 2 and WSe 2 /PbI 2 stacks. This is attributed to the effective heterojunction formation between PbI 2 and these monolayers; type I band alignment in MoS 2 /PbI 2 stacks, where fast-transferred charge carriers accumulate in MoS 2 with high emission efficiency, results in photoluminescence enhancement, and type II in WS 2 /PbI 2 and WSe 2 /PbI 2 stacks, with separated electrons and holes suitable for light harvesting, results in photoluminescence quenching. The results demonstrate that MoS 2 , WS 2 , and WSe 2 monolayers with similar electronic structures show completely distinct light–matter interactions when interfacing with PbI 2 , providing unprecedented capabilities to engineer the device performance of 2D heterostructures.

源语言英语
文章编号1806562
期刊Advanced Materials
31
17
DOI
出版状态已出版 - 25 4月 2019

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