A study on the optimized ohmic contact process of AlGaN/GaN-Si MIS-HEMTs

He Guan, Guiyu Shen, Bo Gao, Hao Zhang, Yucheng Wang, Shaoxi Wang

科研成果: 期刊稿件文章同行评审

7 引用 (Scopus)

摘要

AlGaN/GaN-Si based MIS-HEMTs are considered as the popular candidates for application in the 5G communication system due to their competitive characteristics and low cost. Ohmic contact, as an important fabrication process, significantly affects the performance of the device. In this study, the ohmic contact process, including the SiN passivation layer etching, surface treatment, and barrier layer etching, was studied in detail in order to effectively optimize the device performance. It is observed that the sample with the SiN passivation layer etched by the magnetic neutral loop discharge (NLD) resulted in a lower contact resistance as compared to the reaction ion etching (RIE). The sample surface treated with the O plasma and pickled in the HCl:H2O = 1:10 liquid could effectively remove the pollutants and oxides from the surface, thus, correspondingly presenting a lower ohmic contact resistance as compared to the N2 plasma. Meanwhile, an optimum etching depth was developed with the ICP process for 6 min with an etching speed of 1.6 nm/min. A contact resistance of 0.76Ωmm and square resistance of 274.63 ohm/sq were observed under the above-mentioned optimized ohmic contact process. The AlGaN/GaN-Si MIS-HEMT with gate length of 0.5μm, gate-source space of 1μm, gate-drain space of 2.5μm, and gate width of 100μm was fabricated using the optimized process. A saturation current density of 794.30 mA/mm and the maximum transconductance of 16.86 mS were observed. The findings in this study provide the experimental basis for the manufacturing of AlGaN/GaN-Si based MIS-HEMTs for RF applications.

源语言英语
文章编号9314701
页(从-至)9855-9863
页数9
期刊IEEE Access
9
DOI
出版状态已出版 - 2021

指纹

探究 'A study on the optimized ohmic contact process of AlGaN/GaN-Si MIS-HEMTs' 的科研主题。它们共同构成独一无二的指纹。

引用此