TY - JOUR
T1 - A Rapid Matching Network Layout Synthesis and Optimization Method for High-Performance MMIC PAs Using Modified Implicit Space Mapping
AU - Zhang, Jingyuan
AU - Yan, Xu
AU - Luo, Haorui
AU - Zhang, Hao
AU - Guo, Yongxin
N1 - Publisher Copyright:
© 2004-2012 IEEE.
PY - 2023/3/1
Y1 - 2023/3/1
N2 - In this brief, a new systematic approach of matching network (MN) layout synthesis and optimization for power amplifiers (PAs) is proposed based on implicit space mapping (ISM). Commonly, the performance discrepancy between schematic and initial layout is huge, especially for millimeter wave (mmWave) PAs. To address this issue, the proposed modified ISM can shift the optimization work to the circuit schematic simulations by calibrating carefully-selected auxiliary parameters in the circuit based on EM data. To validate the proposed method, an eligible dual-band inter-stage MN layout is rapidly optimized with only 10 runs of EM-simulations, while a corresponding 16/26.5 GHz concurrent dual-band PA is implemented in a 0.15- $\mu \text{m}$ GaAs pHEMT technology. It exhibits a measured small-signal gain of 21.7/14.1 dB, peak power-added efficiency of 30.2%/40.5%, and saturated output power of 24.8/28.1 dBm with a compact chip size of 2.4 mm2.
AB - In this brief, a new systematic approach of matching network (MN) layout synthesis and optimization for power amplifiers (PAs) is proposed based on implicit space mapping (ISM). Commonly, the performance discrepancy between schematic and initial layout is huge, especially for millimeter wave (mmWave) PAs. To address this issue, the proposed modified ISM can shift the optimization work to the circuit schematic simulations by calibrating carefully-selected auxiliary parameters in the circuit based on EM data. To validate the proposed method, an eligible dual-band inter-stage MN layout is rapidly optimized with only 10 runs of EM-simulations, while a corresponding 16/26.5 GHz concurrent dual-band PA is implemented in a 0.15- $\mu \text{m}$ GaAs pHEMT technology. It exhibits a measured small-signal gain of 21.7/14.1 dB, peak power-added efficiency of 30.2%/40.5%, and saturated output power of 24.8/28.1 dBm with a compact chip size of 2.4 mm2.
KW - dual-band
KW - implicit space mapping (ISM)
KW - millimeter wave (mmWave)
KW - Power amplifier (PA)
UR - http://www.scopus.com/inward/record.url?scp=85141448339&partnerID=8YFLogxK
U2 - 10.1109/TCSII.2022.3217776
DO - 10.1109/TCSII.2022.3217776
M3 - 文章
AN - SCOPUS:85141448339
SN - 1549-7747
VL - 70
SP - 924
EP - 928
JO - IEEE Transactions on Circuits and Systems II: Express Briefs
JF - IEEE Transactions on Circuits and Systems II: Express Briefs
IS - 3
ER -