A low-noise CMOS interface circuit for resonant pressure sensor

Xiaodong Sun, Weizheng Yuan, Sen Ren, Jinjun Deng, Chengyu Jiang

科研成果: 书/报告/会议事项章节会议稿件同行评审

1 引用 (Scopus)

摘要

This paper presents a low-noise CMOS interface circuit of the resonant pressure sensor. A high-frequency carrier is employed to extract the small vibration signal of the resonator and suppress the low-frequency coupling signal. A differential detection circuit is implemented to suppress common mode noise. Sensor chip is packaged together with the interface ASIC, reducing the coupling capacitor of the resonator and the sensing electrode. The AS IC is fabricated in a 0.18 um CMOS process and the sensor chip is fabricated using a commercially available silicon-on-insulator wafer. The test result shows that the resonant pressure sensor has a nonlinearity of 0.045%FS, a hysteresis error of 0.14%FS, and a repeatability error of 0.18%FS.

源语言英语
主期刊名9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
出版商Institute of Electrical and Electronics Engineers Inc.
204-207
页数4
ISBN(电子版)9781479947270
DOI
出版状态已出版 - 23 9月 2014
活动9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 - Waikiki Beach, 美国
期限: 13 4月 201416 4月 2014

出版系列

姓名9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014

会议

会议9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
国家/地区美国
Waikiki Beach
时期13/04/1416/04/14

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