摘要
Efficient conversion from ultraviolet (UV) light to near infrared (NIR) emission has been demonstrated in a series of BaGd2-xYb x(MoO4)4 (x=0.001-2.0, i.e., Yb3+ concentration=0.05-100 mol%) polycrystals. The samples presented enhanced photosensitivity below 375 nm. Under UV light, an intense NIR emission around 1000 nm from 2F5/2→2F7/2 transitions of Yb3+ was observed, which just corresponds to spectral response of Si solar cells. The emission intensity in NIR region showed a dependence on Yb3+ contents. Taking into account the photoluminescence quantum efficiency, the optimal doping to increase the conversion efficiency of Si-solar cells was suggested to be 20 mol%. Diffuse reflectance and luminescence spectra were also systematically investigated to propose a reasonable mechanism for energy conversion process from the photo-excited charge transfer states.
源语言 | 英语 |
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页(从-至) | 4-6 |
页数 | 3 |
期刊 | Materials Letters |
卷 | 117 |
DOI | |
出版状态 | 已出版 - 15 2月 2014 |
已对外发布 | 是 |