A highly efficient ultraviolet to near-infrared converter to improve efficiency of Si solar cells: Yb3+-doped BaGd2(MoO 4)4

Ying Guan, Lin Qin, Yanlin Huang, Taiju Tsuboi, Wei Huang

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摘要

Efficient conversion from ultraviolet (UV) light to near infrared (NIR) emission has been demonstrated in a series of BaGd2-xYb x(MoO4)4 (x=0.001-2.0, i.e., Yb3+ concentration=0.05-100 mol%) polycrystals. The samples presented enhanced photosensitivity below 375 nm. Under UV light, an intense NIR emission around 1000 nm from 2F5/22F7/2 transitions of Yb3+ was observed, which just corresponds to spectral response of Si solar cells. The emission intensity in NIR region showed a dependence on Yb3+ contents. Taking into account the photoluminescence quantum efficiency, the optimal doping to increase the conversion efficiency of Si-solar cells was suggested to be 20 mol%. Diffuse reflectance and luminescence spectra were also systematically investigated to propose a reasonable mechanism for energy conversion process from the photo-excited charge transfer states.

源语言英语
页(从-至)4-6
页数3
期刊Materials Letters
117
DOI
出版状态已出版 - 15 2月 2014
已对外发布

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