TY - GEN
T1 - A 2DOF MEMS Vibrational Energy Harvester
AU - Tao, K.
AU - Tang, L. H.
AU - Wu, J.
AU - Miao, J. M.
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/8/20
Y1 - 2018/8/20
N2 - In this paper, a novel two-degree-of-freedom (2DOF) MEMS electromagnetic vibration energy harvesting system is proposed. The dual-mass resonant structure that comprises of a primary mass and an accessory mass is structured on silicon-on-insulator (SOI) wafer by double-sided deep reactive-ion etching (DRIE). Unlike previous 2DOF harvesters, the induction coil is only patterned on the primary mass for energy conversion. By carefully adjusting the weight of accessory mass, the first two resonances of the primary mass can be tuned close to each other while maintain comparable magnitudes. Therefore, both resonances could contribute to energy harvesting that make the system more efficient and adaptive in frequency-variant vibrational circumstances. With the current prototype, two close resonances with a frequency ratio of only 1.19 and comparable peaks are achieved, providing good validation for the modeling results.
AB - In this paper, a novel two-degree-of-freedom (2DOF) MEMS electromagnetic vibration energy harvesting system is proposed. The dual-mass resonant structure that comprises of a primary mass and an accessory mass is structured on silicon-on-insulator (SOI) wafer by double-sided deep reactive-ion etching (DRIE). Unlike previous 2DOF harvesters, the induction coil is only patterned on the primary mass for energy conversion. By carefully adjusting the weight of accessory mass, the first two resonances of the primary mass can be tuned close to each other while maintain comparable magnitudes. Therefore, both resonances could contribute to energy harvesting that make the system more efficient and adaptive in frequency-variant vibrational circumstances. With the current prototype, two close resonances with a frequency ratio of only 1.19 and comparable peaks are achieved, providing good validation for the modeling results.
UR - http://www.scopus.com/inward/record.url?scp=85053515860&partnerID=8YFLogxK
U2 - 10.1109/INEC.2018.8441919
DO - 10.1109/INEC.2018.8441919
M3 - 会议稿件
AN - SCOPUS:85053515860
SN - 9781538642504
T3 - 2018 IEEE 8th International Nanoelectronics Conferences, INEC 2018
SP - 9
EP - 10
BT - 2018 IEEE 8th International Nanoelectronics Conferences, INEC 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 8th IEEE International Nanoelectronics Conferences, INEC 2018
Y2 - 3 January 2018 through 5 January 2018
ER -