A 0.5-6 GHz Ultra-Wideband Bidirectional Amplification and Digital Controlled Attenuation Integrated Multifunctional Chip based on 0.5μm GaAs P-HEMT Process

Based on the GaAs 0.5μm pHMET process, a 0.5-6 GHz ultra-wideband amplification and attenuation multifunctional chip was developed in this paper. For the amplification unit, a Darlington-Cascode circuit structure was employed to design the transmission amplifier, while a first-stage common-source LNA structure was adopted in the reception channel. A three-stage inverted-Π type structure driven by TLL driver was employed for the digital attenuation unit. The size of the fabricated chip is 3.5×2.7×0.1mm. In the frequency range of 0.5 to 6 GHz, the chip presents a gain of 7.5dB, a P-1dB of more than 8dBm, and a noise coefficient of 4.5dB for the transmission side; meanwhile, it presents a gain of 20dB, a P-1dB of more than 16.5dBm, and a noise coefficient of 3dB for the reception side. Furthermore, the chip presents a good attenuation accuracy as less than 0.5dB at 5dB, 10dB, and 20dB attenuation degree, respectively.