氩气压对磁控溅射制备CdZnTe薄膜形貌,结构和电学特性的影响

Shouzhi Xi; Wanqi Jie; Tao Wang; Gangqiang Zha; Aoqiu Wang; Hui Yu; Lingyan Xu; Hao Zhang; Fan Yang; Boru Zhou; Yadong Xu; Yaxu Gu

doi:10.3969/j.issn.1001-9731.2018.04.023

氩气压对磁控溅射制备CdZnTe薄膜形貌,结构和电学特性的影响

Shouzhi Xi, Wanqi Jie, Tao Wang, Gangqiang Zha, Aoqiu Wang, Hui Yu, Lingyan Xu, Hao Zhang, Fan Yang, Boru Zhou, Yadong Xu, Yaxu Gu

材料学院

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

The CdZnTe films were deposited by radio frequency magnetron sputtering on the FTO substrate at different pressure of Ar range from 0.08 to 1 Pa. The sputtering target was prepared from Cd_0.9Zn_0.1Te ingot. The effects of Ar pressure on the morphology, structure, composition and electrical properties of CdZnTe film were investigated. As the decrease of Ar pressure, the evolution from column to sheet and then to particle morphology of CdZnTe films were shown. The grain size decreased from 180 to 50 nm. The deposited films possess stable cubic zinc-blende structure with (111) preferred orientation and the internal stress weakened as the Ar pressure decrease. The ZnTe and Te phase also occurred at the Ar pressure of 0.5 and 0.3 Pa. The composition of Zn and Cd was larger than that of target. The sheet resistance of CdZnTe film firstly decreased then increased as the Ar pressure decreasing, the carrier concentration and mobility showed opposite trend.

投稿的翻译标题	Effects of Ar pressure on the morphology, structure and electrical properties of CdZnTe film deposited by magnetron sputtering
源语言	繁体中文
页（从-至）	4128-4133
页数	6
期刊	Gongneng Cailiao/Journal of Functional Materials
卷	49
期	4
DOI	https://doi.org/10.3969/j.issn.1001-9731.2018.04.023
出版状态	已出版 - 30 4月 2018

关键词

Ar pressure
CZT film
Magnetron sputtering
MFP

访问文件

10.3969/j.issn.1001-9731.2018.04.023

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{e47cc5209c454d969c37944765042968,

title = "氩气压对磁控溅射制备CdZnTe薄膜形貌,结构和电学特性的影响",

abstract = "The CdZnTe films were deposited by radio frequency magnetron sputtering on the FTO substrate at different pressure of Ar range from 0.08 to 1 Pa. The sputtering target was prepared from Cd0.9Zn0.1Te ingot. The effects of Ar pressure on the morphology, structure, composition and electrical properties of CdZnTe film were investigated. As the decrease of Ar pressure, the evolution from column to sheet and then to particle morphology of CdZnTe films were shown. The grain size decreased from 180 to 50 nm. The deposited films possess stable cubic zinc-blende structure with (111) preferred orientation and the internal stress weakened as the Ar pressure decrease. The ZnTe and Te phase also occurred at the Ar pressure of 0.5 and 0.3 Pa. The composition of Zn and Cd was larger than that of target. The sheet resistance of CdZnTe film firstly decreased then increased as the Ar pressure decreasing, the carrier concentration and mobility showed opposite trend.",

keywords = "Ar pressure, CZT film, Magnetron sputtering, MFP",

author = "Shouzhi Xi and Wanqi Jie and Tao Wang and Gangqiang Zha and Aoqiu Wang and Hui Yu and Lingyan Xu and Hao Zhang and Fan Yang and Boru Zhou and Yadong Xu and Yaxu Gu",

year = "2018",

month = apr,

day = "30",

doi = "10.3969/j.issn.1001-9731.2018.04.023",

language = "繁体中文",

volume = "49",

pages = "4128--4133",

journal = "Gongneng Cailiao/Journal of Functional Materials",

issn = "1001-9731",

publisher = "Journal of Functional Materials",

number = "4",

}

TY - JOUR

T1 - 氩气压对磁控溅射制备CdZnTe薄膜形貌,结构和电学特性的影响

AU - Xi, Shouzhi

AU - Jie, Wanqi

AU - Wang, Tao

AU - Zha, Gangqiang

AU - Wang, Aoqiu

AU - Yu, Hui

AU - Xu, Lingyan

AU - Zhang, Hao

AU - Yang, Fan

AU - Zhou, Boru

AU - Xu, Yadong

AU - Gu, Yaxu

PY - 2018/4/30

Y1 - 2018/4/30

N2 - The CdZnTe films were deposited by radio frequency magnetron sputtering on the FTO substrate at different pressure of Ar range from 0.08 to 1 Pa. The sputtering target was prepared from Cd0.9Zn0.1Te ingot. The effects of Ar pressure on the morphology, structure, composition and electrical properties of CdZnTe film were investigated. As the decrease of Ar pressure, the evolution from column to sheet and then to particle morphology of CdZnTe films were shown. The grain size decreased from 180 to 50 nm. The deposited films possess stable cubic zinc-blende structure with (111) preferred orientation and the internal stress weakened as the Ar pressure decrease. The ZnTe and Te phase also occurred at the Ar pressure of 0.5 and 0.3 Pa. The composition of Zn and Cd was larger than that of target. The sheet resistance of CdZnTe film firstly decreased then increased as the Ar pressure decreasing, the carrier concentration and mobility showed opposite trend.

AB - The CdZnTe films were deposited by radio frequency magnetron sputtering on the FTO substrate at different pressure of Ar range from 0.08 to 1 Pa. The sputtering target was prepared from Cd0.9Zn0.1Te ingot. The effects of Ar pressure on the morphology, structure, composition and electrical properties of CdZnTe film were investigated. As the decrease of Ar pressure, the evolution from column to sheet and then to particle morphology of CdZnTe films were shown. The grain size decreased from 180 to 50 nm. The deposited films possess stable cubic zinc-blende structure with (111) preferred orientation and the internal stress weakened as the Ar pressure decrease. The ZnTe and Te phase also occurred at the Ar pressure of 0.5 and 0.3 Pa. The composition of Zn and Cd was larger than that of target. The sheet resistance of CdZnTe film firstly decreased then increased as the Ar pressure decreasing, the carrier concentration and mobility showed opposite trend.

KW - Ar pressure

KW - CZT film

KW - Magnetron sputtering

KW - MFP

UR - http://www.scopus.com/inward/record.url?scp=85059058580&partnerID=8YFLogxK

U2 - 10.3969/j.issn.1001-9731.2018.04.023

DO - 10.3969/j.issn.1001-9731.2018.04.023

M3 - 文章

AN - SCOPUS:85059058580

SN - 1001-9731

VL - 49

SP - 4128

EP - 4133

JO - Gongneng Cailiao/Journal of Functional Materials

JF - Gongneng Cailiao/Journal of Functional Materials

IS - 4

ER -

氩气压对磁控溅射制备CdZnTe薄膜形貌,结构和电学特性的影响

摘要

关键词

访问文件

其它文件与链接

指纹

引用此