Abstract
A chemical-assisted element direct-reaction method is developed to synthesize ZnSe compound semiconductor material at a relatively low temperature (∼1000 °C). ZnSe polycrystal was obtained in the closed-tube systems with Zn-Se, Zn-Se-Zn(NH 3) 2Cl 2, Zn-Se-NH 4Cl and Zn-Se-ZnCl 2. The as-synthesized samples were tested by X-ray diffraction (XRD), thermogravimetric analysis (TGA) and analyzed by thermodynamic numerical method. The results demonstrate that the synthesis efficiency is higher than 99.96% for Zn-Se-ZnCl 2 system at around 1000 °C for 3 weeks. It also exhibits that not only temperature, but also low apparent ratio of volume and surface area of the source materials and higher ZnCl 2 content are required to achieve high synthesis efficiency. A SeCl transporting reaction synthesis process is proposed based on the thermodynamic analysis.
Original language | English |
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Pages (from-to) | 373-378 |
Number of pages | 6 |
Journal | Journal of Materials Science and Technology |
Volume | 28 |
Issue number | 4 |
DOIs | |
State | Published - Apr 2012 |
Keywords
- Crystallites
- Growth from vapor
- Semiconducting II-VI materials
- Zinc compounds