Upgrading of CdZnTe by annealing with pure Cd and Zn metals

Guoqiang Li; Xiaolu Zhang; Hui Hua; Wanqi Jie

doi:10.1088/0268-1242/21/3/032

Upgrading of CdZnTe by annealing with pure Cd and Zn metals

Guoqiang Li, Xiaolu Zhang, Hui Hua, Wanqi Jie

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

A method for the annealing of a CdZnTe crystal is described in this paper. Pure Cd and Zn metals are used as annealing sources, which simultaneously provide exact Cd and Zn equilibrium partial pressures for CdZnTe at a certain temperature. Characterizations reveal that homogeneity is highly improved and the defect densities are decreased by more than one order, and hereby the structural, optical and electrical properties of the CdZnTe crystal are evidently improved by this annealing. Investigation of the temperature dependence of the CdZnTe quality after annealing shows 1073 K to be the preferable annealing temperature for CdZnTe. This annealing process has already been demonstrated to be superior to approximate equilibrium partial pressure annealing by using Cd_1-yZn_y alloy as the annealing source.

Original language	English
Pages (from-to)	392-396
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	21
Issue number	3
DOIs	https://doi.org/10.1088/0268-1242/21/3/032
State	Published - 1 Mar 2006

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@article{daf6322fe38a4686a99ccd53210127c0,

title = "Upgrading of CdZnTe by annealing with pure Cd and Zn metals",

abstract = "A method for the annealing of a CdZnTe crystal is described in this paper. Pure Cd and Zn metals are used as annealing sources, which simultaneously provide exact Cd and Zn equilibrium partial pressures for CdZnTe at a certain temperature. Characterizations reveal that homogeneity is highly improved and the defect densities are decreased by more than one order, and hereby the structural, optical and electrical properties of the CdZnTe crystal are evidently improved by this annealing. Investigation of the temperature dependence of the CdZnTe quality after annealing shows 1073 K to be the preferable annealing temperature for CdZnTe. This annealing process has already been demonstrated to be superior to approximate equilibrium partial pressure annealing by using Cd1-yZny alloy as the annealing source.",

author = "Guoqiang Li and Xiaolu Zhang and Hui Hua and Wanqi Jie",

year = "2006",

month = mar,

day = "1",

doi = "10.1088/0268-1242/21/3/032",

language = "英语",

volume = "21",

pages = "392--396",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "3",

}

TY - JOUR

T1 - Upgrading of CdZnTe by annealing with pure Cd and Zn metals

AU - Li, Guoqiang

AU - Zhang, Xiaolu

AU - Hua, Hui

AU - Jie, Wanqi

PY - 2006/3/1

Y1 - 2006/3/1

N2 - A method for the annealing of a CdZnTe crystal is described in this paper. Pure Cd and Zn metals are used as annealing sources, which simultaneously provide exact Cd and Zn equilibrium partial pressures for CdZnTe at a certain temperature. Characterizations reveal that homogeneity is highly improved and the defect densities are decreased by more than one order, and hereby the structural, optical and electrical properties of the CdZnTe crystal are evidently improved by this annealing. Investigation of the temperature dependence of the CdZnTe quality after annealing shows 1073 K to be the preferable annealing temperature for CdZnTe. This annealing process has already been demonstrated to be superior to approximate equilibrium partial pressure annealing by using Cd1-yZny alloy as the annealing source.

AB - A method for the annealing of a CdZnTe crystal is described in this paper. Pure Cd and Zn metals are used as annealing sources, which simultaneously provide exact Cd and Zn equilibrium partial pressures for CdZnTe at a certain temperature. Characterizations reveal that homogeneity is highly improved and the defect densities are decreased by more than one order, and hereby the structural, optical and electrical properties of the CdZnTe crystal are evidently improved by this annealing. Investigation of the temperature dependence of the CdZnTe quality after annealing shows 1073 K to be the preferable annealing temperature for CdZnTe. This annealing process has already been demonstrated to be superior to approximate equilibrium partial pressure annealing by using Cd1-yZny alloy as the annealing source.

UR - http://www.scopus.com/inward/record.url?scp=32944476149&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/21/3/032

DO - 10.1088/0268-1242/21/3/032

M3 - 文章

AN - SCOPUS:32944476149

SN - 0268-1242

VL - 21

SP - 392

EP - 396

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 3

ER -

Upgrading of CdZnTe by annealing with pure Cd and Zn metals

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