Unipolar resistive switching effects based on Al/ZnO/P++-Si diodes for nonvolatile memory applications

Wei Shi; Qiang Tai; Xian Hai Xia; Ming Dong Yi; Ling Hai Xie; Qu Li Fan; Lian Hui Wang; Ang Wei; Wei Huang

doi:10.1088/0256-307X/29/8/087201

Unipolar resistive switching effects based on Al/ZnO/P⁺⁺-Si diodes for nonvolatile memory applications

Wei Shi, Qiang Tai, Xian Hai Xia, Ming Dong Yi, Ling Hai Xie, Qu Li Fan, Lian Hui Wang, Ang Wei, Wei Huang

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Al/ZnO/P⁺⁺-Si diodes exhibit typical unipolar resistive switching behaviors. The electroforming-free characteristics are observed after annealing the ZnO thin film at 400°C in air. The ON/OFF ratios of the resistance are in the range of 10⁴-10⁵ at a very low operation voltage of 0.1 V, and the devices show good endurance characteristics of over 400 cycles with negligible reduction. Finally, the memory mechanisms of the diodes are proposed on the basis of the current-voltage and resistance-voltage results. These results indicate that Al/ZnO/P⁺⁺-Si devices have potential applications in nonvolatile memory devices.

Original language	English
Article number	087201
Journal	Chinese Physics Letters
Volume	29
Issue number	8
DOIs	https://doi.org/10.1088/0256-307X/29/8/087201
State	Published - Aug 2012
Externally published	Yes

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title = "Unipolar resistive switching effects based on Al/ZnO/P++-Si diodes for nonvolatile memory applications",

abstract = "Al/ZnO/P++-Si diodes exhibit typical unipolar resistive switching behaviors. The electroforming-free characteristics are observed after annealing the ZnO thin film at 400°C in air. The ON/OFF ratios of the resistance are in the range of 104-105 at a very low operation voltage of 0.1 V, and the devices show good endurance characteristics of over 400 cycles with negligible reduction. Finally, the memory mechanisms of the diodes are proposed on the basis of the current-voltage and resistance-voltage results. These results indicate that Al/ZnO/P++-Si devices have potential applications in nonvolatile memory devices.",

author = "Wei Shi and Qiang Tai and Xia, {Xian Hai} and Yi, {Ming Dong} and Xie, {Ling Hai} and Fan, {Qu Li} and Wang, {Lian Hui} and Ang Wei and Wei Huang",

year = "2012",

month = aug,

doi = "10.1088/0256-307X/29/8/087201",

language = "英语",

volume = "29",

journal = "Chinese Physics Letters",

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T1 - Unipolar resistive switching effects based on Al/ZnO/P++-Si diodes for nonvolatile memory applications

AU - Shi, Wei

AU - Tai, Qiang

AU - Xia, Xian Hai

AU - Yi, Ming Dong

AU - Xie, Ling Hai

AU - Fan, Qu Li

AU - Wang, Lian Hui

AU - Wei, Ang

AU - Huang, Wei

PY - 2012/8

Y1 - 2012/8

N2 - Al/ZnO/P++-Si diodes exhibit typical unipolar resistive switching behaviors. The electroforming-free characteristics are observed after annealing the ZnO thin film at 400°C in air. The ON/OFF ratios of the resistance are in the range of 104-105 at a very low operation voltage of 0.1 V, and the devices show good endurance characteristics of over 400 cycles with negligible reduction. Finally, the memory mechanisms of the diodes are proposed on the basis of the current-voltage and resistance-voltage results. These results indicate that Al/ZnO/P++-Si devices have potential applications in nonvolatile memory devices.

AB - Al/ZnO/P++-Si diodes exhibit typical unipolar resistive switching behaviors. The electroforming-free characteristics are observed after annealing the ZnO thin film at 400°C in air. The ON/OFF ratios of the resistance are in the range of 104-105 at a very low operation voltage of 0.1 V, and the devices show good endurance characteristics of over 400 cycles with negligible reduction. Finally, the memory mechanisms of the diodes are proposed on the basis of the current-voltage and resistance-voltage results. These results indicate that Al/ZnO/P++-Si devices have potential applications in nonvolatile memory devices.

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AN - SCOPUS:84864922733

SN - 0256-307X

VL - 29

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 8

M1 - 087201

ER -

Unipolar resistive switching effects based on Al/ZnO/P⁺⁺-Si diodes for nonvolatile memory applications

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