Abstract
In order to make high resistance CdZnTe(CZT) room temperature X-ray or γ-ray detectors, the ultrasonic wire bonding technology between the CZT contact electrode and the down-lead wire was studied. The influence of the CZT contact electrode preparation technology and ultrasonic wire bonding parameters between the Au contact layer and the down-lead wire on the bonding quality was explored by orthogonal test. The results show that the ultrasonic wire bonding between the CZT contact electrode and the down-lead wire is easier to realize when the CZT wafers are mechanically polished and their contact electrodes are prepared by ion sputter technology. The optimum thickness of CZT contact electrode is 180 nm for the ultrasonic wire bonding. Furthermore, the bonding pressure and welding power have a great effect on the ultrasonic wire bonding rates between the down-lead wire and the CZT contact electrode after the electrode layer preparation technology of CZT wafer is fixed on. The optimized ultrasonic wire bonding parameters for the CZT contact electrode and the down-lead wire are the bonding power 1.5 W, the first bonding pressure 0.882 N, the second bonding pressure 0.588 N and the welding time 20 ms.
| Original language | English |
|---|---|
| Pages (from-to) | 919-923 |
| Number of pages | 5 |
| Journal | Zhongguo Youse Jinshu Xuebao/Chinese Journal of Nonferrous Metals |
| Volume | 19 |
| Issue number | 5 |
| State | Published - May 2009 |
Keywords
- CdZnTe wafer
- Contact electrode
- Microstructure
- Orthogonal test
- Ultrasonic wire bonding