Two-dimensional electronic transport at the bare KTaO3 (100) single crystals by laser irradiation

C. C. Xiao; J. Z. Shen; S. L. Li; S. H. Wang; K. X. Jin

doi:10.1016/j.scriptamat.2024.116256

Two-dimensional electronic transport at the bare KTaO₃ (100) single crystals by laser irradiation

C. C. Xiao, J. Z. Shen, S. L. Li, S. H. Wang, K. X. Jin

School of Physical Science and Technology

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The structure and electrical properties of KTaO₃ (100) single crystals through the laser irradiation have been systematically investigated. The KTaO₃ single crystals after irradiation exhibit the two-dimensional conductivity, which is confirmed by the anisotropic magnetoresistance. The Hall measurements show that carrier density and mobility can reach 10¹⁴ cm⁻² and 110 cm²/ Vs at 20 K by laser irradiation, respectively. Analysis indicates that there is a transition region between amorphous layer and crystalline layer, where the electron transfer accounts for the metallic conductivity. This is the joint effect of the laser-induced oxygen defect and the surface destruction of lattice. Our results provide a novel way to study and fabricate all-oxide devices.

Original language	English
Article number	116256
Journal	Scripta Materialia
Volume	252
DOIs	https://doi.org/10.1016/j.scriptamat.2024.116256
State	Published - 1 Nov 2024

Keywords

KTaO
Laser treatment
Transmission electron microscopy
Transport properties
Two-dimensional electronic transport

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10.1016/j.scriptamat.2024.116256

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title = "Two-dimensional electronic transport at the bare KTaO3 (100) single crystals by laser irradiation",

abstract = "The structure and electrical properties of KTaO3 (100) single crystals through the laser irradiation have been systematically investigated. The KTaO3 single crystals after irradiation exhibit the two-dimensional conductivity, which is confirmed by the anisotropic magnetoresistance. The Hall measurements show that carrier density and mobility can reach 1014 cm−2 and 110 cm2/ Vs at 20 K by laser irradiation, respectively. Analysis indicates that there is a transition region between amorphous layer and crystalline layer, where the electron transfer accounts for the metallic conductivity. This is the joint effect of the laser-induced oxygen defect and the surface destruction of lattice. Our results provide a novel way to study and fabricate all-oxide devices.",

keywords = "KTaO, Laser treatment, Transmission electron microscopy, Transport properties, Two-dimensional electronic transport",

author = "Xiao, {C. C.} and Shen, {J. Z.} and Li, {S. L.} and Wang, {S. H.} and Jin, {K. X.}",

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doi = "10.1016/j.scriptamat.2024.116256",

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TY - JOUR

T1 - Two-dimensional electronic transport at the bare KTaO3 (100) single crystals by laser irradiation

AU - Xiao, C. C.

AU - Shen, J. Z.

AU - Li, S. L.

AU - Wang, S. H.

AU - Jin, K. X.

PY - 2024/11/1

Y1 - 2024/11/1

N2 - The structure and electrical properties of KTaO3 (100) single crystals through the laser irradiation have been systematically investigated. The KTaO3 single crystals after irradiation exhibit the two-dimensional conductivity, which is confirmed by the anisotropic magnetoresistance. The Hall measurements show that carrier density and mobility can reach 1014 cm−2 and 110 cm2/ Vs at 20 K by laser irradiation, respectively. Analysis indicates that there is a transition region between amorphous layer and crystalline layer, where the electron transfer accounts for the metallic conductivity. This is the joint effect of the laser-induced oxygen defect and the surface destruction of lattice. Our results provide a novel way to study and fabricate all-oxide devices.

AB - The structure and electrical properties of KTaO3 (100) single crystals through the laser irradiation have been systematically investigated. The KTaO3 single crystals after irradiation exhibit the two-dimensional conductivity, which is confirmed by the anisotropic magnetoresistance. The Hall measurements show that carrier density and mobility can reach 1014 cm−2 and 110 cm2/ Vs at 20 K by laser irradiation, respectively. Analysis indicates that there is a transition region between amorphous layer and crystalline layer, where the electron transfer accounts for the metallic conductivity. This is the joint effect of the laser-induced oxygen defect and the surface destruction of lattice. Our results provide a novel way to study and fabricate all-oxide devices.

KW - KTaO

KW - Laser treatment

KW - Transmission electron microscopy

KW - Transport properties

KW - Two-dimensional electronic transport

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U2 - 10.1016/j.scriptamat.2024.116256

DO - 10.1016/j.scriptamat.2024.116256

M3 - 文章

AN - SCOPUS:85197035667

SN - 1359-6462

VL - 252

JO - Scripta Materialia

JF - Scripta Materialia

M1 - 116256

ER -

Two-dimensional electronic transport at the bare KTaO₃ (100) single crystals by laser irradiation

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Keywords

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