Transport properties of two-dimensional electron gas generated at LaAlO3/TiO2 bilayer interfaces

Hong Yan; Zhaoting Zhang; Jiaxin Lü; Jijun Yun; Shuanhu Wang; Kexin Jin

doi:10.1016/j.scriptamat.2024.116512

Transport properties of two-dimensional electron gas generated at LaAlO₃/TiO₂ bilayer interfaces

Hong Yan, Zhaoting Zhang, Jiaxin Lü, Jijun Yun, Shuanhu Wang, Kexin Jin

School of Physical Science and Technology

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

Abstract

The two-dimensional electron gas (2DEG) at oxide heterointerface is particularly interesting for achieving abundant exotic physical properties. Herein, we report a 2DEG generated at the interfaces of amorphous-LaAlO₃/TiO₂ (a-LAO/TiO₂) thin film heterostructures. Highly metallic interfaces are obtained for heterostructures with a-LAO and TiO₂ layers that reach 2 nm and 5 nm, respectively. A high carrier density of ∼10¹⁴ cm^-2 and low mobility of ∼10 cm²V^-1s^-1 were achieved. Also, unique negative magnetoresistance is detected in the 2DEG, arising from the weak localization mechanism. The discovery creates a new path to exploring the physics of low-dimensional oxide electronics and facilitates the integration of 2DEG with functional materials for multilayer interfaces.

Original language	English
Article number	116512
Journal	Scripta Materialia
Volume	258
DOIs	https://doi.org/10.1016/j.scriptamat.2024.116512
State	Published - 15 Mar 2025

Keywords

Electronic transports
Emerging interface properties
Titanium oxide
Two-dimensional electron gases

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10.1016/j.scriptamat.2024.116512

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@article{d2f5ca5158464696b7160482f30e8ad5,

title = "Transport properties of two-dimensional electron gas generated at LaAlO3/TiO2 bilayer interfaces",

abstract = "The two-dimensional electron gas (2DEG) at oxide heterointerface is particularly interesting for achieving abundant exotic physical properties. Herein, we report a 2DEG generated at the interfaces of amorphous-LaAlO3/TiO2 (a-LAO/TiO2) thin film heterostructures. Highly metallic interfaces are obtained for heterostructures with a-LAO and TiO2 layers that reach 2 nm and 5 nm, respectively. A high carrier density of ∼1014 cm-2 and low mobility of ∼10 cm2V-1s-1 were achieved. Also, unique negative magnetoresistance is detected in the 2DEG, arising from the weak localization mechanism. The discovery creates a new path to exploring the physics of low-dimensional oxide electronics and facilitates the integration of 2DEG with functional materials for multilayer interfaces.",

keywords = "Electronic transports, Emerging interface properties, Titanium oxide, Two-dimensional electron gases",

author = "Hong Yan and Zhaoting Zhang and Jiaxin L{\"u} and Jijun Yun and Shuanhu Wang and Kexin Jin",

note = "Publisher Copyright: {\textcopyright} 2024",

year = "2025",

month = mar,

day = "15",

doi = "10.1016/j.scriptamat.2024.116512",

language = "英语",

volume = "258",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Acta Materialia Inc",

}

TY - JOUR

T1 - Transport properties of two-dimensional electron gas generated at LaAlO3/TiO2 bilayer interfaces

AU - Yan, Hong

AU - Zhang, Zhaoting

AU - Lü, Jiaxin

AU - Yun, Jijun

AU - Wang, Shuanhu

AU - Jin, Kexin

PY - 2025/3/15

Y1 - 2025/3/15

N2 - The two-dimensional electron gas (2DEG) at oxide heterointerface is particularly interesting for achieving abundant exotic physical properties. Herein, we report a 2DEG generated at the interfaces of amorphous-LaAlO3/TiO2 (a-LAO/TiO2) thin film heterostructures. Highly metallic interfaces are obtained for heterostructures with a-LAO and TiO2 layers that reach 2 nm and 5 nm, respectively. A high carrier density of ∼1014 cm-2 and low mobility of ∼10 cm2V-1s-1 were achieved. Also, unique negative magnetoresistance is detected in the 2DEG, arising from the weak localization mechanism. The discovery creates a new path to exploring the physics of low-dimensional oxide electronics and facilitates the integration of 2DEG with functional materials for multilayer interfaces.

AB - The two-dimensional electron gas (2DEG) at oxide heterointerface is particularly interesting for achieving abundant exotic physical properties. Herein, we report a 2DEG generated at the interfaces of amorphous-LaAlO3/TiO2 (a-LAO/TiO2) thin film heterostructures. Highly metallic interfaces are obtained for heterostructures with a-LAO and TiO2 layers that reach 2 nm and 5 nm, respectively. A high carrier density of ∼1014 cm-2 and low mobility of ∼10 cm2V-1s-1 were achieved. Also, unique negative magnetoresistance is detected in the 2DEG, arising from the weak localization mechanism. The discovery creates a new path to exploring the physics of low-dimensional oxide electronics and facilitates the integration of 2DEG with functional materials for multilayer interfaces.

KW - Electronic transports

KW - Emerging interface properties

KW - Titanium oxide

KW - Two-dimensional electron gases

UR - http://www.scopus.com/inward/record.url?scp=85211705224&partnerID=8YFLogxK

U2 - 10.1016/j.scriptamat.2024.116512

DO - 10.1016/j.scriptamat.2024.116512

M3 - 文章

AN - SCOPUS:85211705224

SN - 1359-6462

VL - 258

JO - Scripta Materialia

JF - Scripta Materialia

M1 - 116512

ER -

Transport properties of two-dimensional electron gas generated at LaAlO₃/TiO₂ bilayer interfaces

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