Transmission electron microscopy study of amorphous Ge                         2                         Sb                          2                         Te                         5                          films induced by an ultraviolet single-pulse laser

J. J. Zhao; F. R. Liu; X. X. Han; Z. Zhu; X. Lin; F. Liu; N. X. Sun

doi:10.1016/j.apsusc.2014.05.006

Transmission electron microscopy study of amorphous Ge ₂ Sb ₂ Te ₅ films induced by an ultraviolet single-pulse laser

J. J. Zhao, F. R. Liu, X. X. Han, Z. Zhu, X. Lin, F. Liu, N. X. Sun

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Crystallization behaviors of α-GST films with the thickness of 80 and 30 nm induced by an ultraviolet pulse laser were investigated by using TEM integrated with SAED. Firstly, crystalline phase morphologies were shown and analyzed. Both plate grains and spherical grains were found for 80 nm thick film, while only plate grains were found for 30 nm thick film. Then the relationship between the grain size and laser fluence for the 80 nm thick film was studied and the effects of film thickness on crystallization morphology were analyzed. Finally a crystallization process model based on the relationship of the crystallization starting temperature and heating temperature was constructed to elucidate how the solid-phase crystallization and melt-cooling crystallization occurred and developed. It also unified the crystallization starting temperature under static conditions and the crystallization starting temperature under laser inducing conditions.

Original language	English
Pages (from-to)	83-88
Number of pages	6
Journal	Applied Surface Science
Volume	311
DOIs	https://doi.org/10.1016/j.apsusc.2014.05.006
State	Published - 30 Aug 2014

Keywords

Crystallization
Thickness effects
Ultraviolet laser
α-GST

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10.1016/j.apsusc.2014.05.006

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Zhao, J. J., Liu, F. R., Han, X. X., Zhu, Z., Lin, X., Liu, F., & Sun, N. X. (2014). Transmission electron microscopy study of amorphous Ge ₂ Sb ₂ Te ₅ films induced by an ultraviolet single-pulse laser Applied Surface Science, 311, 83-88. https://doi.org/10.1016/j.apsusc.2014.05.006

Zhao, J. J. ; Liu, F. R. ; Han, X. X. et al. / Transmission electron microscopy study of amorphous Ge ₂ Sb ₂ Te ₅ films induced by an ultraviolet single-pulse laser In: Applied Surface Science. 2014 ; Vol. 311. pp. 83-88.

@article{40e34e442710414890086b588c28a811,

title = " Transmission electron microscopy study of amorphous Ge 2 Sb 2 Te 5 films induced by an ultraviolet single-pulse laser ",

abstract = "Crystallization behaviors of α-GST films with the thickness of 80 and 30 nm induced by an ultraviolet pulse laser were investigated by using TEM integrated with SAED. Firstly, crystalline phase morphologies were shown and analyzed. Both plate grains and spherical grains were found for 80 nm thick film, while only plate grains were found for 30 nm thick film. Then the relationship between the grain size and laser fluence for the 80 nm thick film was studied and the effects of film thickness on crystallization morphology were analyzed. Finally a crystallization process model based on the relationship of the crystallization starting temperature and heating temperature was constructed to elucidate how the solid-phase crystallization and melt-cooling crystallization occurred and developed. It also unified the crystallization starting temperature under static conditions and the crystallization starting temperature under laser inducing conditions.",

keywords = "Crystallization, Thickness effects, Ultraviolet laser, α-GST",

author = "Zhao, {J. J.} and Liu, {F. R.} and Han, {X. X.} and Z. Zhu and X. Lin and F. Liu and Sun, {N. X.}",

year = "2014",

month = aug,

day = "30",

doi = "10.1016/j.apsusc.2014.05.006",

language = "英语",

volume = "311",

pages = "83--88",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

}

Zhao, JJ, Liu, FR, Han, XX, Zhu, Z, Lin, X, Liu, F & Sun, NX 2014, ' Transmission electron microscopy study of amorphous Ge ₂ Sb ₂ Te ₅ films induced by an ultraviolet single-pulse laser ', Applied Surface Science, vol. 311, pp. 83-88. https://doi.org/10.1016/j.apsusc.2014.05.006

Transmission electron microscopy study of amorphous Ge ₂ Sb ₂ Te ₅ films induced by an ultraviolet single-pulse laser . / Zhao, J. J.; Liu, F. R.; Han, X. X. et al.
In: Applied Surface Science, Vol. 311, 30.08.2014, p. 83-88.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Transmission electron microscopy study of amorphous Ge 2 Sb 2 Te 5 films induced by an ultraviolet single-pulse laser

AU - Zhao, J. J.

AU - Liu, F. R.

AU - Han, X. X.

AU - Zhu, Z.

AU - Lin, X.

AU - Liu, F.

AU - Sun, N. X.

PY - 2014/8/30

Y1 - 2014/8/30

N2 - Crystallization behaviors of α-GST films with the thickness of 80 and 30 nm induced by an ultraviolet pulse laser were investigated by using TEM integrated with SAED. Firstly, crystalline phase morphologies were shown and analyzed. Both plate grains and spherical grains were found for 80 nm thick film, while only plate grains were found for 30 nm thick film. Then the relationship between the grain size and laser fluence for the 80 nm thick film was studied and the effects of film thickness on crystallization morphology were analyzed. Finally a crystallization process model based on the relationship of the crystallization starting temperature and heating temperature was constructed to elucidate how the solid-phase crystallization and melt-cooling crystallization occurred and developed. It also unified the crystallization starting temperature under static conditions and the crystallization starting temperature under laser inducing conditions.

AB - Crystallization behaviors of α-GST films with the thickness of 80 and 30 nm induced by an ultraviolet pulse laser were investigated by using TEM integrated with SAED. Firstly, crystalline phase morphologies were shown and analyzed. Both plate grains and spherical grains were found for 80 nm thick film, while only plate grains were found for 30 nm thick film. Then the relationship between the grain size and laser fluence for the 80 nm thick film was studied and the effects of film thickness on crystallization morphology were analyzed. Finally a crystallization process model based on the relationship of the crystallization starting temperature and heating temperature was constructed to elucidate how the solid-phase crystallization and melt-cooling crystallization occurred and developed. It also unified the crystallization starting temperature under static conditions and the crystallization starting temperature under laser inducing conditions.

KW - Crystallization

KW - Thickness effects

KW - Ultraviolet laser

KW - α-GST

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U2 - 10.1016/j.apsusc.2014.05.006

DO - 10.1016/j.apsusc.2014.05.006

M3 - 文章

AN - SCOPUS:84903379903

SN - 0169-4332

VL - 311

SP - 83

EP - 88

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Zhao JJ, Liu FR, Han XX, Zhu Z, Lin X, Liu F et al. Transmission electron microscopy study of amorphous Ge ₂ Sb ₂ Te ₅ films induced by an ultraviolet single-pulse laser Applied Surface Science. 2014 Aug 30;311:83-88. doi: 10.1016/j.apsusc.2014.05.006

Transmission electron microscopy study of amorphous Ge ₂ Sb ₂ Te ₅ films induced by an ultraviolet single-pulse laser

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