Towards the cost effective epitaxy of hillocks free CdZnTe film on (001)GaAs by close-spaced sublimation

Junning Gao; Wanqi Jie; Yong Xie; Xin Zheng; Hui Yu; Tao Wang; Guoqiang Pan

doi:10.1016/j.matlet.2012.03.050

Towards the cost effective epitaxy of hillocks free CdZnTe film on (001)GaAs by close-spaced sublimation

Junning Gao, Wanqi Jie, Yong Xie, Xin Zheng, Hui Yu, Tao Wang, Guoqiang Pan

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Cost-effective epitaxy of hillocks free CdZnTe films on (001)GaAs was explored with close-spaced sublimation (CSS) technique. The orientation and film quality were studied with scanning electron microscopy (SEM), X-ray diffraction θ-2θ and Φ scans and rocking, and cross-sectional transmission electron microscopy (TEM). It is found that higher deposition rate and better film quality can be achieved simultaneously at the elevated source and substrate temperatures. The full width half maximum (FWHM) of the X-ray rocking curve for (004) plane of the best CdZnTe film obtained so far is 306 arcsec, which was deposited at a rate of 1 μm/min under 100 Pa of Ar. The hillocks are believed to be prevented due to the prevention of the formation and propagation of long stacking faults.

Original language	English
Pages (from-to)	39-41
Number of pages	3
Journal	Materials Letters
Volume	78
DOIs	https://doi.org/10.1016/j.matlet.2012.03.050
State	Published - 1 Jul 2012

Keywords

CdZnTe
Close-spaced sublimation
Epitaxial growth
Semiconductors
Thick films

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10.1016/j.matlet.2012.03.050

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title = "Towards the cost effective epitaxy of hillocks free CdZnTe film on (001)GaAs by close-spaced sublimation",

abstract = "Cost-effective epitaxy of hillocks free CdZnTe films on (001)GaAs was explored with close-spaced sublimation (CSS) technique. The orientation and film quality were studied with scanning electron microscopy (SEM), X-ray diffraction θ-2θ and Φ scans and rocking, and cross-sectional transmission electron microscopy (TEM). It is found that higher deposition rate and better film quality can be achieved simultaneously at the elevated source and substrate temperatures. The full width half maximum (FWHM) of the X-ray rocking curve for (004) plane of the best CdZnTe film obtained so far is 306 arcsec, which was deposited at a rate of 1 μm/min under 100 Pa of Ar. The hillocks are believed to be prevented due to the prevention of the formation and propagation of long stacking faults.",

keywords = "CdZnTe, Close-spaced sublimation, Epitaxial growth, Semiconductors, Thick films",

author = "Junning Gao and Wanqi Jie and Yong Xie and Xin Zheng and Hui Yu and Tao Wang and Guoqiang Pan",

year = "2012",

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doi = "10.1016/j.matlet.2012.03.050",

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T1 - Towards the cost effective epitaxy of hillocks free CdZnTe film on (001)GaAs by close-spaced sublimation

AU - Gao, Junning

AU - Jie, Wanqi

AU - Xie, Yong

AU - Zheng, Xin

AU - Yu, Hui

AU - Wang, Tao

AU - Pan, Guoqiang

PY - 2012/7/1

Y1 - 2012/7/1

N2 - Cost-effective epitaxy of hillocks free CdZnTe films on (001)GaAs was explored with close-spaced sublimation (CSS) technique. The orientation and film quality were studied with scanning electron microscopy (SEM), X-ray diffraction θ-2θ and Φ scans and rocking, and cross-sectional transmission electron microscopy (TEM). It is found that higher deposition rate and better film quality can be achieved simultaneously at the elevated source and substrate temperatures. The full width half maximum (FWHM) of the X-ray rocking curve for (004) plane of the best CdZnTe film obtained so far is 306 arcsec, which was deposited at a rate of 1 μm/min under 100 Pa of Ar. The hillocks are believed to be prevented due to the prevention of the formation and propagation of long stacking faults.

AB - Cost-effective epitaxy of hillocks free CdZnTe films on (001)GaAs was explored with close-spaced sublimation (CSS) technique. The orientation and film quality were studied with scanning electron microscopy (SEM), X-ray diffraction θ-2θ and Φ scans and rocking, and cross-sectional transmission electron microscopy (TEM). It is found that higher deposition rate and better film quality can be achieved simultaneously at the elevated source and substrate temperatures. The full width half maximum (FWHM) of the X-ray rocking curve for (004) plane of the best CdZnTe film obtained so far is 306 arcsec, which was deposited at a rate of 1 μm/min under 100 Pa of Ar. The hillocks are believed to be prevented due to the prevention of the formation and propagation of long stacking faults.

KW - CdZnTe

KW - Close-spaced sublimation

KW - Epitaxial growth

KW - Semiconductors

KW - Thick films

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U2 - 10.1016/j.matlet.2012.03.050

DO - 10.1016/j.matlet.2012.03.050

M3 - 文章

AN - SCOPUS:84861610944

SN - 0167-577X

VL - 78

SP - 39

EP - 41

JO - Materials Letters

JF - Materials Letters

ER -

Towards the cost effective epitaxy of hillocks free CdZnTe film on (001)GaAs by close-spaced sublimation

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Keywords

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