TY - JOUR
T1 - Thermodynamic study of the chemical vapor deposition in the SiCl3CH3-NH3-H2 system
AU - Ren, Haitao
AU - Zhang, Litong
AU - Su, Kehe
AU - Zeng, Qingfeng
AU - Guan, Kang
AU - Cheng, Laifei
N1 - Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.
PY - 2015/3/2
Y1 - 2015/3/2
N2 - The gas-phase reaction thermodynamic of the chemical vapor deposition in the SiCl3CH3-NH3-H2 system was investigated with a relatively complete set of 443 species, in which the thermochemistry data include the heat capacities, entropies, enthalpies of formation, and Gibbs energies of formation were calculated. Five condensed phases, silicon carbide (α-SiC and β-SiC), silicon nitride (Si3N4), graphite (C) and silicon (Si) were taken into consideration. The distribution of the equilibrium concentration of the 443 species was obtained. The effects of temperature and reactant ratios of SiCl3CH3/(SiCl3CH3 + NH3) on the formation and yield of condensed phases were discussed.
AB - The gas-phase reaction thermodynamic of the chemical vapor deposition in the SiCl3CH3-NH3-H2 system was investigated with a relatively complete set of 443 species, in which the thermochemistry data include the heat capacities, entropies, enthalpies of formation, and Gibbs energies of formation were calculated. Five condensed phases, silicon carbide (α-SiC and β-SiC), silicon nitride (Si3N4), graphite (C) and silicon (Si) were taken into consideration. The distribution of the equilibrium concentration of the 443 species was obtained. The effects of temperature and reactant ratios of SiCl3CH3/(SiCl3CH3 + NH3) on the formation and yield of condensed phases were discussed.
UR - http://www.scopus.com/inward/record.url?scp=84922238851&partnerID=8YFLogxK
U2 - 10.1016/j.cplett.2015.01.042
DO - 10.1016/j.cplett.2015.01.042
M3 - 文章
AN - SCOPUS:84922238851
SN - 0009-2614
VL - 623
SP - 29
EP - 36
JO - Chemical Physics Letters
JF - Chemical Physics Letters
ER -