TY - JOUR
T1 - Thermally stimulated current spectroscopy applied on defect characterization in semi-insulating Cd 0.9Zn 0.1Te
AU - Nan, Ruihua
AU - Jie, Wanqi
AU - Zha, Gangqiang
AU - Wang, Bei
AU - Yu, Hui
PY - 2012/12/15
Y1 - 2012/12/15
N2 - Defects exhibiting trapping behaviors in semi-insulating (SI) materials were investigated by thermally stimulated current (TSC) spectroscopy. The variation of measurement conditions during the initial photoexcitation and thermal emission, such as the heating rate, bias voltage, illumination time and delay time, may bring some significant effects on TSC spectra, leading to incomplete characterization of trap levels. In this work, defects with deep levels in the band gap of SI-Cd 0.9Zn 0.1Te crystal, grown by the modified vertical Bridgman (MVB) method, were studied via TSC measurements. TSC measurement of the SI-CZT sample was performed with the optimized measurement conditions. Ten different traps and a deep donor (E DD) level were characterized from the as-obtained spectrum in the temperature range from 25 to 310 K with the aid of simultaneous multiple peak analysis (SIMPA). The origins of these traps were identified in detail as well.
AB - Defects exhibiting trapping behaviors in semi-insulating (SI) materials were investigated by thermally stimulated current (TSC) spectroscopy. The variation of measurement conditions during the initial photoexcitation and thermal emission, such as the heating rate, bias voltage, illumination time and delay time, may bring some significant effects on TSC spectra, leading to incomplete characterization of trap levels. In this work, defects with deep levels in the band gap of SI-Cd 0.9Zn 0.1Te crystal, grown by the modified vertical Bridgman (MVB) method, were studied via TSC measurements. TSC measurement of the SI-CZT sample was performed with the optimized measurement conditions. Ten different traps and a deep donor (E DD) level were characterized from the as-obtained spectrum in the temperature range from 25 to 310 K with the aid of simultaneous multiple peak analysis (SIMPA). The origins of these traps were identified in detail as well.
KW - A1. Characterization
KW - A1. Defects
KW - A2. Bridgman technique
KW - B1. Cadmium compounds
KW - B2. Semiconducting cadmium compounds
KW - B2. Semiconducting II-VI materials
UR - http://www.scopus.com/inward/record.url?scp=84866710691&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2012.09.001
DO - 10.1016/j.jcrysgro.2012.09.001
M3 - 文章
AN - SCOPUS:84866710691
SN - 0022-0248
VL - 361
SP - 25
EP - 29
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -