Theoretical investigation for the active-to-passive transition in the oxidation of silicon carbide

Junjie Wang, Litong Zhang, Qingfeng Zeng, Gérard L. Vignoles, Alain Guette

Research output: Contribution to journalArticlepeer-review

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Abstract

The oxidation of silicon carbide at high temperatures from 673.15 to 2173.15 K is investigated by using thermodynamic equilibrium calculations and a mass transfer model. The dominant reaction of the active-to-passive transition and five other dominant reactions, which are in six different temperature regions, have been determined according to the main equilibrium products. Then, a modified Wagner's model has been developed to determine the active-to-passive transition boundary by combining mass transport and thermodynamic calculations. The present theoretical calculations satisfactorily explained the reported experimental and theoretical data. The influence of flow rate on the active-to-passive transition boundary has been explained using our model. The rate controlling mechanism of the oxidation at the active-to-passive transition point is proposed.

Original languageEnglish
Pages (from-to)1665-1673
Number of pages9
JournalJournal of the American Ceramic Society
Volume91
Issue number5
DOIs
StatePublished - May 2008

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