The structural damage and defects induced by femtosecond laser pulse in ZnSe single crystals

Huanyong Li; Wanqi Jie; Lan Yang; Shian Zhang; Zhenrong Sun; Kewei Xu

doi:10.1016/j.mssp.2006.01.069

The structural damage and defects induced by femtosecond laser pulse in ZnSe single crystals

Huanyong Li, Wanqi Jie, Lan Yang, Shian Zhang, Zhenrong Sun, Kewei Xu

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The structural damage and defects induced by the near-infrared femtosecond pulse in ZnSe crystal were investigated by scanning electron microscope and the photoluminescence spectra, respectively. The structural damage exhibits the different morphologies with the focusing angles of laser. The induced thermal strain is estimated to be about 8.7×10^-3. Two induced point defects, zinc vacancy and selenium-related defects can exist permanently in femtosecond-irradiated ZnSe crystal, and V_Se is the main factor of influencing SA emission.

Original language	English
Pages (from-to)	151-155
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	9
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mssp.2006.01.069
State	Published - Feb 2006

Keywords

Damage
Defects
Femtosecond pulse
ZnSe

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10.1016/j.mssp.2006.01.069

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title = "The structural damage and defects induced by femtosecond laser pulse in ZnSe single crystals",

abstract = "The structural damage and defects induced by the near-infrared femtosecond pulse in ZnSe crystal were investigated by scanning electron microscope and the photoluminescence spectra, respectively. The structural damage exhibits the different morphologies with the focusing angles of laser. The induced thermal strain is estimated to be about 8.7×10-3. Two induced point defects, zinc vacancy and selenium-related defects can exist permanently in femtosecond-irradiated ZnSe crystal, and VSe is the main factor of influencing SA emission.",

keywords = "Damage, Defects, Femtosecond pulse, ZnSe",

author = "Huanyong Li and Wanqi Jie and Lan Yang and Shian Zhang and Zhenrong Sun and Kewei Xu",

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T1 - The structural damage and defects induced by femtosecond laser pulse in ZnSe single crystals

AU - Li, Huanyong

AU - Jie, Wanqi

AU - Yang, Lan

AU - Zhang, Shian

AU - Sun, Zhenrong

AU - Xu, Kewei

PY - 2006/2

Y1 - 2006/2

N2 - The structural damage and defects induced by the near-infrared femtosecond pulse in ZnSe crystal were investigated by scanning electron microscope and the photoluminescence spectra, respectively. The structural damage exhibits the different morphologies with the focusing angles of laser. The induced thermal strain is estimated to be about 8.7×10-3. Two induced point defects, zinc vacancy and selenium-related defects can exist permanently in femtosecond-irradiated ZnSe crystal, and VSe is the main factor of influencing SA emission.

AB - The structural damage and defects induced by the near-infrared femtosecond pulse in ZnSe crystal were investigated by scanning electron microscope and the photoluminescence spectra, respectively. The structural damage exhibits the different morphologies with the focusing angles of laser. The induced thermal strain is estimated to be about 8.7×10-3. Two induced point defects, zinc vacancy and selenium-related defects can exist permanently in femtosecond-irradiated ZnSe crystal, and VSe is the main factor of influencing SA emission.

KW - Damage

KW - Defects

KW - Femtosecond pulse

KW - ZnSe

UR - http://www.scopus.com/inward/record.url?scp=33746826098&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2006.01.069

DO - 10.1016/j.mssp.2006.01.069

M3 - 文章

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SN - 1369-8001

VL - 9

SP - 151

EP - 155

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 1-3

ER -

The structural damage and defects induced by femtosecond laser pulse in ZnSe single crystals

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Keywords

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