The Microstructure and Dielectric Properties of SiBCN Ceramics Fabricated Via LPCVD/CVI

Yongsheng Liu; Nan Chai; Xiaofei Liu; Hailong Qin; Xiaowei Yin; Litong Zhang; Laifei Cheng

doi:10.1111/jace.13730

The Microstructure and Dielectric Properties of SiBCN Ceramics Fabricated Via LPCVD/CVI

Yongsheng Liu, Nan Chai, Xiaofei Liu, Hailong Qin, Xiaowei Yin, Litong Zhang, Laifei Cheng

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Low-pressure chemical vapor deposition and infiltration was used for the first time to fabricate SiBCN ceramics with proper dielectric properties to lower the preparation temperature. SiBCN ceramics indicated by thermodynamic phase diagram with different phase compositions from CH₃SiCl₃-NH₃-BCl₃-H₂ could be obtained through adjustable parameters. The as-prepared SiBCN ceramics fabricated above 900°C showed proper dielectric properties with dielectric loss of about 0.1, which was due to the generation of amorphous carbon and SiC nanocrystals.

Original language	English
Pages (from-to)	2703-2706
Number of pages	4
Journal	Journal of the American Ceramic Society
Volume	98
Issue number	9
DOIs	https://doi.org/10.1111/jace.13730
State	Published - 1 Sep 2015

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title = "The Microstructure and Dielectric Properties of SiBCN Ceramics Fabricated Via LPCVD/CVI",

abstract = "Low-pressure chemical vapor deposition and infiltration was used for the first time to fabricate SiBCN ceramics with proper dielectric properties to lower the preparation temperature. SiBCN ceramics indicated by thermodynamic phase diagram with different phase compositions from CH3SiCl3-NH3-BCl3-H2 could be obtained through adjustable parameters. The as-prepared SiBCN ceramics fabricated above 900°C showed proper dielectric properties with dielectric loss of about 0.1, which was due to the generation of amorphous carbon and SiC nanocrystals.",

author = "Yongsheng Liu and Nan Chai and Xiaofei Liu and Hailong Qin and Xiaowei Yin and Litong Zhang and Laifei Cheng",

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T1 - The Microstructure and Dielectric Properties of SiBCN Ceramics Fabricated Via LPCVD/CVI

AU - Liu, Yongsheng

AU - Chai, Nan

AU - Liu, Xiaofei

AU - Qin, Hailong

AU - Yin, Xiaowei

AU - Zhang, Litong

AU - Cheng, Laifei

PY - 2015/9/1

Y1 - 2015/9/1

N2 - Low-pressure chemical vapor deposition and infiltration was used for the first time to fabricate SiBCN ceramics with proper dielectric properties to lower the preparation temperature. SiBCN ceramics indicated by thermodynamic phase diagram with different phase compositions from CH3SiCl3-NH3-BCl3-H2 could be obtained through adjustable parameters. The as-prepared SiBCN ceramics fabricated above 900°C showed proper dielectric properties with dielectric loss of about 0.1, which was due to the generation of amorphous carbon and SiC nanocrystals.

AB - Low-pressure chemical vapor deposition and infiltration was used for the first time to fabricate SiBCN ceramics with proper dielectric properties to lower the preparation temperature. SiBCN ceramics indicated by thermodynamic phase diagram with different phase compositions from CH3SiCl3-NH3-BCl3-H2 could be obtained through adjustable parameters. The as-prepared SiBCN ceramics fabricated above 900°C showed proper dielectric properties with dielectric loss of about 0.1, which was due to the generation of amorphous carbon and SiC nanocrystals.

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U2 - 10.1111/jace.13730

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M3 - 文章

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JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

IS - 9

ER -

The Microstructure and Dielectric Properties of SiBCN Ceramics Fabricated Via LPCVD/CVI

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