The Influence of Si3N4w Volume Fraction on the Microstructure and Properties of Si3N4w/Si3N4 Composites via CVI Technique

Chao Chen; Yongsheng Liu; Wei Yue; Fang Ye; Jing Wang; Qingfeng Zeng

doi:10.3389/fmats.2020.588716

The Influence of Si₃N_4w Volume Fraction on the Microstructure and Properties of Si₃N_4w/Si₃N₄ Composites via CVI Technique

Chao Chen, Yongsheng Liu, Wei Yue, Fang Ye, Jing Wang, Qingfeng Zeng

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Wave-transparent ceramic composites with excellent comprehensive performances are of particular significance for the development of space vehicles. In this study, Si₃N_4w was prepared by the gel-casting process and then combined with chemical vapor infiltration (CVI)-obtained Si₃N₄ to yield Si₃N_4w/Si₃N₄ composites with five Si₃N_4w volume fractions. The influence of the Si₃N_4w volume fraction on the microstructures, mechanical properties, and dielectric characteristics of the Si₃N_4w/Si₃N₄ composites were all studied. The results showed that Si₃N_4w/Si₃N₄ composites possess A sandwich structures. Higher Si₃N_4w volume fractions led to less incorporated amounts of the Si₃N₄ matrix at the same depth. The 25 vol% Si₃N_4w/Si₃N₄ composites integrated relatively higher Si₃N_4w volume fraction and load transfer ability of the matrix, leading to better flexural strengths reaching up to 41.37 MPa. The dielectric constants of the five prepared Si₃N_4w/Si₃N₄ composites ranged from 2.25 to 4.0. The dielectric losses were all lower than 0.005, demonstrating the good dielectric properties of the Si₃N_4w/Si₃N₄ composites.

Original language	English
Article number	588716
Journal	Frontiers in Materials
Volume	7
DOIs	https://doi.org/10.3389/fmats.2020.588716
State	Published - 27 Nov 2020

Keywords

SiN/SiN composites
chemical vapor infiltration
dielectric properties
gel-casting
mechanical properties

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title = "The Influence of Si3N4w Volume Fraction on the Microstructure and Properties of Si3N4w/Si3N4 Composites via CVI Technique",

abstract = "Wave-transparent ceramic composites with excellent comprehensive performances are of particular significance for the development of space vehicles. In this study, Si3N4w was prepared by the gel-casting process and then combined with chemical vapor infiltration (CVI)-obtained Si3N4 to yield Si3N4w/Si3N4 composites with five Si3N4w volume fractions. The influence of the Si3N4w volume fraction on the microstructures, mechanical properties, and dielectric characteristics of the Si3N4w/Si3N4 composites were all studied. The results showed that Si3N4w/Si3N4 composites possess A sandwich structures. Higher Si3N4w volume fractions led to less incorporated amounts of the Si3N4 matrix at the same depth. The 25 vol% Si3N4w/Si3N4 composites integrated relatively higher Si3N4w volume fraction and load transfer ability of the matrix, leading to better flexural strengths reaching up to 41.37 MPa. The dielectric constants of the five prepared Si3N4w/Si3N4 composites ranged from 2.25 to 4.0. The dielectric losses were all lower than 0.005, demonstrating the good dielectric properties of the Si3N4w/Si3N4 composites.",

keywords = "SiN/SiN composites, chemical vapor infiltration, dielectric properties, gel-casting, mechanical properties",

author = "Chao Chen and Yongsheng Liu and Wei Yue and Fang Ye and Jing Wang and Qingfeng Zeng",

note = "Publisher Copyright: {\textcopyright} Copyright {\textcopyright} 2020 Chen, Liu, Yue, Ye, Wang and Zeng.",

year = "2020",

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doi = "10.3389/fmats.2020.588716",

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AU - Chen, Chao

AU - Liu, Yongsheng

AU - Yue, Wei

AU - Ye, Fang

AU - Wang, Jing

AU - Zeng, Qingfeng

PY - 2020/11/27

Y1 - 2020/11/27

N2 - Wave-transparent ceramic composites with excellent comprehensive performances are of particular significance for the development of space vehicles. In this study, Si3N4w was prepared by the gel-casting process and then combined with chemical vapor infiltration (CVI)-obtained Si3N4 to yield Si3N4w/Si3N4 composites with five Si3N4w volume fractions. The influence of the Si3N4w volume fraction on the microstructures, mechanical properties, and dielectric characteristics of the Si3N4w/Si3N4 composites were all studied. The results showed that Si3N4w/Si3N4 composites possess A sandwich structures. Higher Si3N4w volume fractions led to less incorporated amounts of the Si3N4 matrix at the same depth. The 25 vol% Si3N4w/Si3N4 composites integrated relatively higher Si3N4w volume fraction and load transfer ability of the matrix, leading to better flexural strengths reaching up to 41.37 MPa. The dielectric constants of the five prepared Si3N4w/Si3N4 composites ranged from 2.25 to 4.0. The dielectric losses were all lower than 0.005, demonstrating the good dielectric properties of the Si3N4w/Si3N4 composites.

AB - Wave-transparent ceramic composites with excellent comprehensive performances are of particular significance for the development of space vehicles. In this study, Si3N4w was prepared by the gel-casting process and then combined with chemical vapor infiltration (CVI)-obtained Si3N4 to yield Si3N4w/Si3N4 composites with five Si3N4w volume fractions. The influence of the Si3N4w volume fraction on the microstructures, mechanical properties, and dielectric characteristics of the Si3N4w/Si3N4 composites were all studied. The results showed that Si3N4w/Si3N4 composites possess A sandwich structures. Higher Si3N4w volume fractions led to less incorporated amounts of the Si3N4 matrix at the same depth. The 25 vol% Si3N4w/Si3N4 composites integrated relatively higher Si3N4w volume fraction and load transfer ability of the matrix, leading to better flexural strengths reaching up to 41.37 MPa. The dielectric constants of the five prepared Si3N4w/Si3N4 composites ranged from 2.25 to 4.0. The dielectric losses were all lower than 0.005, demonstrating the good dielectric properties of the Si3N4w/Si3N4 composites.

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The Influence of Si₃N_4w Volume Fraction on the Microstructure and Properties of Si₃N_4w/Si₃N₄ Composites via CVI Technique

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