The improved resistive switching of HfO2:Cu film with multilevel storage

Tingting Guo; Tingting Tan; Zhengtang Liu

doi:10.1007/s10853-015-9257-9

The improved resistive switching of HfO₂:Cu film with multilevel storage

Tingting Guo, Tingting Tan, Zhengtang Liu

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The Cu-doped and undoped HfO₂ films were fabricated by magnetron sputtering. The effect of Cu doping on resistive switching (RS) of HfO₂ film was demonstrated. Improvements in ON/OFF ratio and switching parameters were observed. The multilevel behavior of Cu/HfO₂:Cu/Si sample was also investigated by controlling the current compliance during set process and at least three low resistance states (LRSs) for data storage could be obtained. The three LRSs and the high resistance state can be distinguished in a range of 10³ and the HfO₂:Cu sample exhibited good reliability. The RS behavior of HfO₂:Cu sample can be well interpreted by the proposed filamentary model. The oxygen vacancies and Cu ions in the film are both responsible for the RS behaviors.

Original language	English
Pages (from-to)	7043-7047
Number of pages	5
Journal	Journal of Materials Science
Volume	50
Issue number	21
DOIs	https://doi.org/10.1007/s10853-015-9257-9
State	Published - 17 Nov 2015

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title = "The improved resistive switching of HfO2:Cu film with multilevel storage",

abstract = "The Cu-doped and undoped HfO2 films were fabricated by magnetron sputtering. The effect of Cu doping on resistive switching (RS) of HfO2 film was demonstrated. Improvements in ON/OFF ratio and switching parameters were observed. The multilevel behavior of Cu/HfO2:Cu/Si sample was also investigated by controlling the current compliance during set process and at least three low resistance states (LRSs) for data storage could be obtained. The three LRSs and the high resistance state can be distinguished in a range of 103 and the HfO2:Cu sample exhibited good reliability. The RS behavior of HfO2:Cu sample can be well interpreted by the proposed filamentary model. The oxygen vacancies and Cu ions in the film are both responsible for the RS behaviors.",

author = "Tingting Guo and Tingting Tan and Zhengtang Liu",

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AU - Guo, Tingting

AU - Tan, Tingting

AU - Liu, Zhengtang

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Y1 - 2015/11/17

N2 - The Cu-doped and undoped HfO2 films were fabricated by magnetron sputtering. The effect of Cu doping on resistive switching (RS) of HfO2 film was demonstrated. Improvements in ON/OFF ratio and switching parameters were observed. The multilevel behavior of Cu/HfO2:Cu/Si sample was also investigated by controlling the current compliance during set process and at least three low resistance states (LRSs) for data storage could be obtained. The three LRSs and the high resistance state can be distinguished in a range of 103 and the HfO2:Cu sample exhibited good reliability. The RS behavior of HfO2:Cu sample can be well interpreted by the proposed filamentary model. The oxygen vacancies and Cu ions in the film are both responsible for the RS behaviors.

AB - The Cu-doped and undoped HfO2 films were fabricated by magnetron sputtering. The effect of Cu doping on resistive switching (RS) of HfO2 film was demonstrated. Improvements in ON/OFF ratio and switching parameters were observed. The multilevel behavior of Cu/HfO2:Cu/Si sample was also investigated by controlling the current compliance during set process and at least three low resistance states (LRSs) for data storage could be obtained. The three LRSs and the high resistance state can be distinguished in a range of 103 and the HfO2:Cu sample exhibited good reliability. The RS behavior of HfO2:Cu sample can be well interpreted by the proposed filamentary model. The oxygen vacancies and Cu ions in the film are both responsible for the RS behaviors.

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The improved resistive switching of HfO₂:Cu film with multilevel storage

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