The effect of hole defects on the oxidation behaviour of two-dimensional C/SiC composites

Hui Mei; Ding Zhang; Junchao Xia; Changkui Yu; Laifei Cheng

doi:10.1016/j.ceramint.2016.06.200

The effect of hole defects on the oxidation behaviour of two-dimensional C/SiC composites

Hui Mei, Ding Zhang, Junchao Xia, Changkui Yu, Laifei Cheng

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Oxidation behaviour of two-dimensional (2D) C/SiC composites with 0, 1 and 2 mm average diameter holes has been investigated in air at 700 °C. Oxidation tests, mechanical tests, microstructural characterization and computed tomography (CT) were performed to find the effect of hole defects on the oxidation behaviour of C/SiC composites. The experimental results pointed out that the thermal exposure area (TEA) ratio and oxidation time were two key affecting factors on the oxidation behaviour. Weight loss was found to accelerate at oxidation durations higher than 1 h, thereafter residual tensile strength also dropped. A TEA ratio of 16% was found as critical in severely downgrading the residual tensile strength and significantly weakening the oxidation resistance behaviour for C/SiC composites contain hole defects.

Original language	English
Pages (from-to)	15479-15484
Number of pages	6
Journal	Ceramics International
Volume	42
Issue number	14
DOIs	https://doi.org/10.1016/j.ceramint.2016.06.200
State	Published - 1 Nov 2016

Keywords

2D C/SiC composites
CT
Hole defects
Oxidation behaviour

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10.1016/j.ceramint.2016.06.200

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title = "The effect of hole defects on the oxidation behaviour of two-dimensional C/SiC composites",

abstract = "Oxidation behaviour of two-dimensional (2D) C/SiC composites with 0, 1 and 2 mm average diameter holes has been investigated in air at 700 °C. Oxidation tests, mechanical tests, microstructural characterization and computed tomography (CT) were performed to find the effect of hole defects on the oxidation behaviour of C/SiC composites. The experimental results pointed out that the thermal exposure area (TEA) ratio and oxidation time were two key affecting factors on the oxidation behaviour. Weight loss was found to accelerate at oxidation durations higher than 1 h, thereafter residual tensile strength also dropped. A TEA ratio of 16% was found as critical in severely downgrading the residual tensile strength and significantly weakening the oxidation resistance behaviour for C/SiC composites contain hole defects.",

keywords = "2D C/SiC composites, CT, Hole defects, Oxidation behaviour",

author = "Hui Mei and Ding Zhang and Junchao Xia and Changkui Yu and Laifei Cheng",

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T1 - The effect of hole defects on the oxidation behaviour of two-dimensional C/SiC composites

AU - Mei, Hui

AU - Zhang, Ding

AU - Xia, Junchao

AU - Yu, Changkui

AU - Cheng, Laifei

PY - 2016/11/1

Y1 - 2016/11/1

N2 - Oxidation behaviour of two-dimensional (2D) C/SiC composites with 0, 1 and 2 mm average diameter holes has been investigated in air at 700 °C. Oxidation tests, mechanical tests, microstructural characterization and computed tomography (CT) were performed to find the effect of hole defects on the oxidation behaviour of C/SiC composites. The experimental results pointed out that the thermal exposure area (TEA) ratio and oxidation time were two key affecting factors on the oxidation behaviour. Weight loss was found to accelerate at oxidation durations higher than 1 h, thereafter residual tensile strength also dropped. A TEA ratio of 16% was found as critical in severely downgrading the residual tensile strength and significantly weakening the oxidation resistance behaviour for C/SiC composites contain hole defects.

AB - Oxidation behaviour of two-dimensional (2D) C/SiC composites with 0, 1 and 2 mm average diameter holes has been investigated in air at 700 °C. Oxidation tests, mechanical tests, microstructural characterization and computed tomography (CT) were performed to find the effect of hole defects on the oxidation behaviour of C/SiC composites. The experimental results pointed out that the thermal exposure area (TEA) ratio and oxidation time were two key affecting factors on the oxidation behaviour. Weight loss was found to accelerate at oxidation durations higher than 1 h, thereafter residual tensile strength also dropped. A TEA ratio of 16% was found as critical in severely downgrading the residual tensile strength and significantly weakening the oxidation resistance behaviour for C/SiC composites contain hole defects.

KW - 2D C/SiC composites

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The effect of hole defects on the oxidation behaviour of two-dimensional C/SiC composites

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