Temporal pulsed x-ray response of CdZnTe: In detector

Rong Rong Guo; Ya Dong Xu; Gang Qiang Zha; Tao Wang; Wan Qi Jie

doi:10.1088/1674-1056/27/12/127202

Temporal pulsed x-ray response of CdZnTe: In detector

Rong Rong Guo, Ya Dong Xu, Gang Qiang Zha, Tao Wang, Wan Qi Jie

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The temporal response of cadmium-zinc-telluride (CZT) crystals is evaluated at room temperature by using an ultrafast-pulsed x-ray source. The dynamics of carrier relaxation in a CZT single crystal is modeled at a microscopic level based on a multi-trapping effect. The effects of the irradiation flux and bias voltage on the amplitude and full width at half maximum (FWHM) of the transient currents are investigated. It is demonstrated that the temporal response process is affected by defect level occupation fraction. A fast photon current can be achieved under intense pulsed x-ray irradiation to be up to 2.78x109 photons mm2s1. Meanwhile, it is found that high bias voltage could enhance carrier detrapping by suppressing the capture of structure defects and thus improve the temporal response of CZT detectors.

Original language	English
Article number	127202
Journal	Chinese Physics B
Volume	27
Issue number	12
DOIs	https://doi.org/10.1088/1674-1056/27/12/127202
State	Published - Dec 2018

Keywords

CdZnTe
charge carrier
transient current
ultrafast-pulsed x-rays

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10.1088/1674-1056/27/12/127202

Cite this

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title = "Temporal pulsed x-ray response of CdZnTe: In detector",

abstract = "The temporal response of cadmium-zinc-telluride (CZT) crystals is evaluated at room temperature by using an ultrafast-pulsed x-ray source. The dynamics of carrier relaxation in a CZT single crystal is modeled at a microscopic level based on a multi-trapping effect. The effects of the irradiation flux and bias voltage on the amplitude and full width at half maximum (FWHM) of the transient currents are investigated. It is demonstrated that the temporal response process is affected by defect level occupation fraction. A fast photon current can be achieved under intense pulsed x-ray irradiation to be up to 2.78x109 photons mm2s1. Meanwhile, it is found that high bias voltage could enhance carrier detrapping by suppressing the capture of structure defects and thus improve the temporal response of CZT detectors.",

keywords = "CdZnTe, charge carrier, transient current, ultrafast-pulsed x-rays",

author = "Guo, {Rong Rong} and Xu, {Ya Dong} and Zha, {Gang Qiang} and Tao Wang and Jie, {Wan Qi}",

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T1 - Temporal pulsed x-ray response of CdZnTe

T2 - In detector

AU - Guo, Rong Rong

AU - Xu, Ya Dong

AU - Zha, Gang Qiang

AU - Wang, Tao

AU - Jie, Wan Qi

PY - 2018/12

Y1 - 2018/12

N2 - The temporal response of cadmium-zinc-telluride (CZT) crystals is evaluated at room temperature by using an ultrafast-pulsed x-ray source. The dynamics of carrier relaxation in a CZT single crystal is modeled at a microscopic level based on a multi-trapping effect. The effects of the irradiation flux and bias voltage on the amplitude and full width at half maximum (FWHM) of the transient currents are investigated. It is demonstrated that the temporal response process is affected by defect level occupation fraction. A fast photon current can be achieved under intense pulsed x-ray irradiation to be up to 2.78x109 photons mm2s1. Meanwhile, it is found that high bias voltage could enhance carrier detrapping by suppressing the capture of structure defects and thus improve the temporal response of CZT detectors.

AB - The temporal response of cadmium-zinc-telluride (CZT) crystals is evaluated at room temperature by using an ultrafast-pulsed x-ray source. The dynamics of carrier relaxation in a CZT single crystal is modeled at a microscopic level based on a multi-trapping effect. The effects of the irradiation flux and bias voltage on the amplitude and full width at half maximum (FWHM) of the transient currents are investigated. It is demonstrated that the temporal response process is affected by defect level occupation fraction. A fast photon current can be achieved under intense pulsed x-ray irradiation to be up to 2.78x109 photons mm2s1. Meanwhile, it is found that high bias voltage could enhance carrier detrapping by suppressing the capture of structure defects and thus improve the temporal response of CZT detectors.

KW - CdZnTe

KW - charge carrier

KW - transient current

KW - ultrafast-pulsed x-rays

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DO - 10.1088/1674-1056/27/12/127202

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VL - 27

JO - Chinese Physics B

JF - Chinese Physics B

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ER -

Temporal pulsed x-ray response of CdZnTe: In detector

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