@inproceedings{ca12dadf08744b6c93a95f84eb71f903,
title = "TEM study on defects in epitaxial CdZnTe films deposited on (001)GaAs by close-spaced sublimation",
abstract = "A transmission electron microscopy (TEM) study on defects in a 30 μm-thick epitaxial CZT film deposited on (001)GaAs via close-spaced sublimation was performed. The epi-layer is of good quality without twins. Dislocations and stacking faults are mainly gathered near the interface. The dislocations are extrinsic either of Lomer edge or 60° type. Pseudo extrinsic stacking faults consisting of two independent and oppositely oriented extrinsic dislocations have. been found both on the (111) and the (111) planes, L-shaped defects originated from the interface have been discovered. The near-interface-side of L is consisted of 3 compressed (111) planes and the lateral side is consisted of 3-4 misarranged (111) planes. This L-shaped defect is induced by the absence of a misfit dislocation at the intersection between L and the interface.",
author = "Junning Gao and Wanqi Jie and Lin Luo and Yanyan Yuan and Tao Wang and Shouzhi Xi and Hui Yu",
year = "2012",
doi = "10.1557/opl.2012.1027",
language = "英语",
isbn = "9781605114095",
series = "Materials Research Society Symposium Proceedings",
pages = "85--90",
booktitle = "Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II",
note = "2012 MRS Spring Meeting ; Conference date: 09-04-2012 Through 13-04-2012",
}