Synthesis, Structure, Band Gap, and Near-Infrared Photosensitivity of a New Chalcogenide Crystal, (NH4)4Ag12Sn7Se22

Ke Zhao Du; Xing Hui Qi; Mei Ling Feng; Jian Rong Li; Xing Zhi Wang; Cheng Feng Du; Guo Dong Zou; Meng Wang; Xiao Ying Huang

doi:10.1021/acs.inorgchem.6b00803

Synthesis, Structure, Band Gap, and Near-Infrared Photosensitivity of a New Chalcogenide Crystal, (NH₄)₄Ag₁₂Sn₇Se₂₂

Ke Zhao Du, Xing Hui Qi, Mei Ling Feng, Jian Rong Li, Xing Zhi Wang, Cheng Feng Du, Guo Dong Zou, Meng Wang, Xiao Ying Huang

Research output: Contribution to journal › Article › peer-review

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Abstract

A new chalcogenide crystal, (NH₄)₄Ag₁₂Sn₇Se₂₂ (FJSM-STS), has been solvothermally synthesized. The crystal structure, which is composed of arrays of [Sn₃Se₉]_n^6n- chains interconnecting [SnAg₆Se₁₀]_n^10n- and [Ag₃Se₄]_n^5n- layers, is unprecedented among the reported A/Ag/Sn/Q (A = cation; Q = S, Se, and Te) compounds. Optical absorption together with theoretical calculations of the band structure indicate a direct band gap of 1.21 eV for FJSM-STS, which is close to the ideal band gap to maximize the photoconversion efficiency proposed by Shockley and Queisser. The toxic-metal-free crystal of FJSM-STS exhibits obvious photosensitivity in the near-infrared range. The variates of power and temperature on the photosensitivity have been studied.

Original language	English
Pages (from-to)	5110-5112
Number of pages	3
Journal	Inorganic Chemistry
Volume	55
Issue number	11
DOIs	https://doi.org/10.1021/acs.inorgchem.6b00803
State	Published - 6 Jun 2016
Externally published	Yes

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title = "Synthesis, Structure, Band Gap, and Near-Infrared Photosensitivity of a New Chalcogenide Crystal, (NH4)4Ag12Sn7Se22",

abstract = "A new chalcogenide crystal, (NH4)4Ag12Sn7Se22 (FJSM-STS), has been solvothermally synthesized. The crystal structure, which is composed of arrays of [Sn3Se9]n6n- chains interconnecting [SnAg6Se10]n10n- and [Ag3Se4]n5n- layers, is unprecedented among the reported A/Ag/Sn/Q (A = cation; Q = S, Se, and Te) compounds. Optical absorption together with theoretical calculations of the band structure indicate a direct band gap of 1.21 eV for FJSM-STS, which is close to the ideal band gap to maximize the photoconversion efficiency proposed by Shockley and Queisser. The toxic-metal-free crystal of FJSM-STS exhibits obvious photosensitivity in the near-infrared range. The variates of power and temperature on the photosensitivity have been studied.",

author = "Du, {Ke Zhao} and Qi, {Xing Hui} and Feng, {Mei Ling} and Li, {Jian Rong} and Wang, {Xing Zhi} and Du, {Cheng Feng} and Zou, {Guo Dong} and Meng Wang and Huang, {Xiao Ying}",

note = "Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

month = jun,

day = "6",

doi = "10.1021/acs.inorgchem.6b00803",

language = "英语",

volume = "55",

pages = "5110--5112",

journal = "Inorganic Chemistry",

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TY - JOUR

T1 - Synthesis, Structure, Band Gap, and Near-Infrared Photosensitivity of a New Chalcogenide Crystal, (NH4)4Ag12Sn7Se22

AU - Du, Ke Zhao

AU - Qi, Xing Hui

AU - Feng, Mei Ling

AU - Li, Jian Rong

AU - Wang, Xing Zhi

AU - Du, Cheng Feng

AU - Zou, Guo Dong

AU - Wang, Meng

AU - Huang, Xiao Ying

PY - 2016/6/6

Y1 - 2016/6/6

N2 - A new chalcogenide crystal, (NH4)4Ag12Sn7Se22 (FJSM-STS), has been solvothermally synthesized. The crystal structure, which is composed of arrays of [Sn3Se9]n6n- chains interconnecting [SnAg6Se10]n10n- and [Ag3Se4]n5n- layers, is unprecedented among the reported A/Ag/Sn/Q (A = cation; Q = S, Se, and Te) compounds. Optical absorption together with theoretical calculations of the band structure indicate a direct band gap of 1.21 eV for FJSM-STS, which is close to the ideal band gap to maximize the photoconversion efficiency proposed by Shockley and Queisser. The toxic-metal-free crystal of FJSM-STS exhibits obvious photosensitivity in the near-infrared range. The variates of power and temperature on the photosensitivity have been studied.

AB - A new chalcogenide crystal, (NH4)4Ag12Sn7Se22 (FJSM-STS), has been solvothermally synthesized. The crystal structure, which is composed of arrays of [Sn3Se9]n6n- chains interconnecting [SnAg6Se10]n10n- and [Ag3Se4]n5n- layers, is unprecedented among the reported A/Ag/Sn/Q (A = cation; Q = S, Se, and Te) compounds. Optical absorption together with theoretical calculations of the band structure indicate a direct band gap of 1.21 eV for FJSM-STS, which is close to the ideal band gap to maximize the photoconversion efficiency proposed by Shockley and Queisser. The toxic-metal-free crystal of FJSM-STS exhibits obvious photosensitivity in the near-infrared range. The variates of power and temperature on the photosensitivity have been studied.

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U2 - 10.1021/acs.inorgchem.6b00803

DO - 10.1021/acs.inorgchem.6b00803

M3 - 文章

AN - SCOPUS:84973346047

SN - 0020-1669

VL - 55

SP - 5110

EP - 5112

JO - Inorganic Chemistry

JF - Inorganic Chemistry

IS - 11

ER -

Synthesis, Structure, Band Gap, and Near-Infrared Photosensitivity of a New Chalcogenide Crystal, (NH₄)₄Ag₁₂Sn₇Se₂₂

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