TY - JOUR
T1 - Synthesis, microstructure and electromagnetic properties of Hf-based SiBCN ceramics
AU - Zhang, Min
AU - Fan, Xiaomeng
AU - Ye, Fang
AU - Xue, Jimei
AU - Fan, Shangwu
AU - Cheng, Laifei
N1 - Publisher Copyright:
© 2023 Elsevier Ltd and Techna Group S.r.l.
PY - 2023/6/15
Y1 - 2023/6/15
N2 - In this work, two kinds of ceramic polymers, polyborosilazane and polyhafnoxane, were mixed by a precursor blending method, followed by curing and pyrolysis to obtain Hf-based SiBCN ceramics. Through FTIR and NMR characterization of cured product, it can be found that the two precursors underwent cross-linking reaction during the curing process, resulting in the increase of crystallization temperature of HfO2 and β-SiC, and the formation of new components (HfB2 and HfN) during pyrolysis. When the pyrolysis temperature increases, the average values of the real part and imaginary part of the dielectric constant of Hf-based SiBCN ceramics increased from 7.2 to 4.9 to 9.0 and 6.6, respectively, resulting from the precipitation of HfB2 and HfC(N) with high dielectric constants. The effective absorption width decreased from 3.4 to 2.5 GHz, and the minimum value of reflection coefficient increased from −14.9 to −12.2 dB, which is caused by poor impedance matching. After being oxidized at 500 °C for 50 h in air, the free carbon basically disappears, and the full X-band absorption can be realized for the Hf-based SiBCN ceramic pyrolyzed at 1500 °C with a thickness of 2.8 mm.
AB - In this work, two kinds of ceramic polymers, polyborosilazane and polyhafnoxane, were mixed by a precursor blending method, followed by curing and pyrolysis to obtain Hf-based SiBCN ceramics. Through FTIR and NMR characterization of cured product, it can be found that the two precursors underwent cross-linking reaction during the curing process, resulting in the increase of crystallization temperature of HfO2 and β-SiC, and the formation of new components (HfB2 and HfN) during pyrolysis. When the pyrolysis temperature increases, the average values of the real part and imaginary part of the dielectric constant of Hf-based SiBCN ceramics increased from 7.2 to 4.9 to 9.0 and 6.6, respectively, resulting from the precipitation of HfB2 and HfC(N) with high dielectric constants. The effective absorption width decreased from 3.4 to 2.5 GHz, and the minimum value of reflection coefficient increased from −14.9 to −12.2 dB, which is caused by poor impedance matching. After being oxidized at 500 °C for 50 h in air, the free carbon basically disappears, and the full X-band absorption can be realized for the Hf-based SiBCN ceramic pyrolyzed at 1500 °C with a thickness of 2.8 mm.
KW - Hf-based SiBCN ceramics
KW - Imaginary part
KW - Precursor blending method
KW - Real part
UR - http://www.scopus.com/inward/record.url?scp=85151503315&partnerID=8YFLogxK
U2 - 10.1016/j.ceramint.2023.02.256
DO - 10.1016/j.ceramint.2023.02.256
M3 - 文章
AN - SCOPUS:85151503315
SN - 0272-8842
VL - 49
SP - 19664
EP - 19672
JO - Ceramics International
JF - Ceramics International
IS - 12
ER -