Synthesis, characterization and field emission properties of SiC nanowires prepared by chemical vapor reaction

Jinhua Li; Yulei Zhang; Yaling Kong; Lin Hu; Changqing Jin; Zengzhe Xi

doi:10.1016/j.vacuum.2017.09.032

Synthesis, characterization and field emission properties of SiC nanowires prepared by chemical vapor reaction

Jinhua Li, Yulei Zhang, Yaling Kong, Lin Hu, Changqing Jin, Zengzhe Xi

School of Materials Sience and Engineering

Xi'an Technological University

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

SiC nanowires were synthesized on graphite substrates by a simple and economical technique of chemical vapor reaction (CVR) without catalyst assistant. The morphology and microstructure of the SiC nanowires were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, Fourier transform infrared spectroscopy and Raman scattering spectrum. The field emission properties of the SiC nanowires were measured. Results showed that the synthesized nanowires were β-SiC nanowires with some defects and a thin SiO₂ amorphous layer. The nanowires were generally several tens to hundreds micrometres in length and about 100 nm in diameter. The growth of SiC nanowires was controlled by vapor-solid (VS) mechanism. The electron emission turn-on field (E_to) of the SiC nanowires is only 2.7 V/μm, which is lower than that of the reported SiC nanowires.

Original language	English
Pages (from-to)	87-92
Number of pages	6
Journal	Vacuum
Volume	146
DOIs	https://doi.org/10.1016/j.vacuum.2017.09.032
State	Published - Dec 2017

Keywords

CVR
Field emission
Microstructure
SiC nanowires
VS mechanism

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10.1016/j.vacuum.2017.09.032

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@article{4c02a499d52e45afb2e5e9d1e2cdeda4,

title = "Synthesis, characterization and field emission properties of SiC nanowires prepared by chemical vapor reaction",

abstract = "SiC nanowires were synthesized on graphite substrates by a simple and economical technique of chemical vapor reaction (CVR) without catalyst assistant. The morphology and microstructure of the SiC nanowires were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, Fourier transform infrared spectroscopy and Raman scattering spectrum. The field emission properties of the SiC nanowires were measured. Results showed that the synthesized nanowires were β-SiC nanowires with some defects and a thin SiO2 amorphous layer. The nanowires were generally several tens to hundreds micrometres in length and about 100 nm in diameter. The growth of SiC nanowires was controlled by vapor-solid (VS) mechanism. The electron emission turn-on field (Eto) of the SiC nanowires is only 2.7 V/μm, which is lower than that of the reported SiC nanowires.",

keywords = "CVR, Field emission, Microstructure, SiC nanowires, VS mechanism",

author = "Jinhua Li and Yulei Zhang and Yaling Kong and Lin Hu and Changqing Jin and Zengzhe Xi",

note = "Publisher Copyright: {\textcopyright} 2017",

year = "2017",

month = dec,

doi = "10.1016/j.vacuum.2017.09.032",

language = "英语",

volume = "146",

pages = "87--92",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Synthesis, characterization and field emission properties of SiC nanowires prepared by chemical vapor reaction

AU - Li, Jinhua

AU - Zhang, Yulei

AU - Kong, Yaling

AU - Hu, Lin

AU - Jin, Changqing

AU - Xi, Zengzhe

PY - 2017/12

Y1 - 2017/12

N2 - SiC nanowires were synthesized on graphite substrates by a simple and economical technique of chemical vapor reaction (CVR) without catalyst assistant. The morphology and microstructure of the SiC nanowires were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, Fourier transform infrared spectroscopy and Raman scattering spectrum. The field emission properties of the SiC nanowires were measured. Results showed that the synthesized nanowires were β-SiC nanowires with some defects and a thin SiO2 amorphous layer. The nanowires were generally several tens to hundreds micrometres in length and about 100 nm in diameter. The growth of SiC nanowires was controlled by vapor-solid (VS) mechanism. The electron emission turn-on field (Eto) of the SiC nanowires is only 2.7 V/μm, which is lower than that of the reported SiC nanowires.

AB - SiC nanowires were synthesized on graphite substrates by a simple and economical technique of chemical vapor reaction (CVR) without catalyst assistant. The morphology and microstructure of the SiC nanowires were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, Fourier transform infrared spectroscopy and Raman scattering spectrum. The field emission properties of the SiC nanowires were measured. Results showed that the synthesized nanowires were β-SiC nanowires with some defects and a thin SiO2 amorphous layer. The nanowires were generally several tens to hundreds micrometres in length and about 100 nm in diameter. The growth of SiC nanowires was controlled by vapor-solid (VS) mechanism. The electron emission turn-on field (Eto) of the SiC nanowires is only 2.7 V/μm, which is lower than that of the reported SiC nanowires.

KW - CVR

KW - Field emission

KW - Microstructure

KW - SiC nanowires

KW - VS mechanism

UR - http://www.scopus.com/inward/record.url?scp=85029668783&partnerID=8YFLogxK

U2 - 10.1016/j.vacuum.2017.09.032

DO - 10.1016/j.vacuum.2017.09.032

M3 - 文章

AN - SCOPUS:85029668783

SN - 0042-207X

VL - 146

SP - 87

EP - 92

JO - Vacuum

JF - Vacuum

ER -

Synthesis, characterization and field emission properties of SiC nanowires prepared by chemical vapor reaction

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Keywords

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