Synthesis and transport properties of Ca3Co4O 9/ZnO heterostructure

B. C. Luo; J. Wang; M. M. Duan; K. X. Jin; C. L. Chen

doi:10.1016/j.matlet.2014.01.074

Synthesis and transport properties of Ca₃Co₄O ₉/ZnO heterostructure

B. C. Luo, J. Wang, M. M. Duan, K. X. Jin, C. L. Chen

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Highly c-axis-oriented Ca₃Co₄O₉ (CCO) and ZnO layers were successively grown on Silicon substrates using the pulsed laser deposition (PLD) technique. The in-plane resistivity of Ca₃Co ₄O₉ film exhibits a metal-insulator transition at 120 K, and the positive Seebeck coefficient is about 119.3 μV/K at 300 K. The electrical transport properties of Ca₃Co₄O₉/ZnO heterostructure demonstrate a rectifying behavior within the temperature range of 45-300 K and the diffusion potential decreases with increasing temperature.

Original language	English
Pages (from-to)	133-135
Number of pages	3
Journal	Materials Letters
Volume	120
DOIs	https://doi.org/10.1016/j.matlet.2014.01.074
State	Published - 1 Apr 2014

Keywords

Electrical properties
Heterostructures
Thermoelectric materials

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10.1016/j.matlet.2014.01.074

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@article{51c49451d499459c9577fdd2cea132db,

title = "Synthesis and transport properties of Ca3Co4O 9/ZnO heterostructure",

abstract = "Highly c-axis-oriented Ca3Co4O9 (CCO) and ZnO layers were successively grown on Silicon substrates using the pulsed laser deposition (PLD) technique. The in-plane resistivity of Ca3Co 4O9 film exhibits a metal-insulator transition at 120 K, and the positive Seebeck coefficient is about 119.3 μV/K at 300 K. The electrical transport properties of Ca3Co4O9/ZnO heterostructure demonstrate a rectifying behavior within the temperature range of 45-300 K and the diffusion potential decreases with increasing temperature.",

keywords = "Electrical properties, Heterostructures, Thermoelectric materials",

author = "Luo, {B. C.} and J. Wang and Duan, {M. M.} and Jin, {K. X.} and Chen, {C. L.}",

year = "2014",

month = apr,

day = "1",

doi = "10.1016/j.matlet.2014.01.074",

language = "英语",

volume = "120",

pages = "133--135",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Synthesis and transport properties of Ca3Co4O 9/ZnO heterostructure

AU - Luo, B. C.

AU - Wang, J.

AU - Duan, M. M.

AU - Jin, K. X.

AU - Chen, C. L.

PY - 2014/4/1

Y1 - 2014/4/1

N2 - Highly c-axis-oriented Ca3Co4O9 (CCO) and ZnO layers were successively grown on Silicon substrates using the pulsed laser deposition (PLD) technique. The in-plane resistivity of Ca3Co 4O9 film exhibits a metal-insulator transition at 120 K, and the positive Seebeck coefficient is about 119.3 μV/K at 300 K. The electrical transport properties of Ca3Co4O9/ZnO heterostructure demonstrate a rectifying behavior within the temperature range of 45-300 K and the diffusion potential decreases with increasing temperature.

AB - Highly c-axis-oriented Ca3Co4O9 (CCO) and ZnO layers were successively grown on Silicon substrates using the pulsed laser deposition (PLD) technique. The in-plane resistivity of Ca3Co 4O9 film exhibits a metal-insulator transition at 120 K, and the positive Seebeck coefficient is about 119.3 μV/K at 300 K. The electrical transport properties of Ca3Co4O9/ZnO heterostructure demonstrate a rectifying behavior within the temperature range of 45-300 K and the diffusion potential decreases with increasing temperature.

KW - Electrical properties

KW - Heterostructures

KW - Thermoelectric materials

UR - http://www.scopus.com/inward/record.url?scp=84893445306&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2014.01.074

DO - 10.1016/j.matlet.2014.01.074

M3 - 文章

AN - SCOPUS:84893445306

SN - 0167-577X

VL - 120

SP - 133

EP - 135

JO - Materials Letters

JF - Materials Letters

ER -

Synthesis and transport properties of Ca₃Co₄O ₉/ZnO heterostructure

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Keywords

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