Abstract
The polycrystalline material of mercury indium telluride (MIT) was synthesized through a direct reaction between high purity Hg, In and Te. The MIT crystal with dimensions of Φ 15 mm × 175 mm was successfully grown by using vertical Bridgman method from the synthesized polycrystalline material. The asgrown crystal was analyzed by powder X-ray diffraction technique and determined to be single phase with defeet zinc blende structure and space group F 43̄m. The rocking curve of the as-grown crystal showed that the crystal was a single crystal with high quality. The abnormal thermal behavior of Hg overflow was found through DSC and TG analysis, which was of very importance to crystal growth as well as device fabrication and application.
Original language | English |
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Pages (from-to) | 129-132 |
Number of pages | 4 |
Journal | Xiyou Jinshu/Chinese Journal of Rare Metals |
Volume | 33 |
Issue number | 1 |
State | Published - Feb 2009 |
Keywords
- Crystal growth
- Mercury indium telluride
- NIR photovoltaic detector
- Semiconductor materials
- Vertical Bridgman method