Surface passivation and electrical properties of p-CdZnTe crystal

Qiang Li; Wanqi Jie

doi:10.1088/0268-1242/21/1/013

Surface passivation and electrical properties of p-CdZnTe crystal

Qiang Li, Wanqi Jie

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The electrical properties of Au/p-CdZnTe contacts with different surface treatments, especially passivation treatment, are investigated in this paper. After the passivation, a TeO₂ oxide layer with a thickness of 3.1 nm on the CdZnTe surface was identified by XPS analysis. Meanwhile, photoluminescence (PL) spectra confirmed that the passivation treatment minimized the surface trap state density and decreased the deep-level defects related to recombination of Cd vacancies. Current-voltage and capacitance-voltage characteristics were measured. It was shown that the passivation treatment could increase the barrier height of the Au/p-CdZnTe contact and decrease the leakage current.

Original language	English
Pages (from-to)	72-75
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	21
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/21/1/013
State	Published - 1 Jan 2006

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title = "Surface passivation and electrical properties of p-CdZnTe crystal",

abstract = "The electrical properties of Au/p-CdZnTe contacts with different surface treatments, especially passivation treatment, are investigated in this paper. After the passivation, a TeO2 oxide layer with a thickness of 3.1 nm on the CdZnTe surface was identified by XPS analysis. Meanwhile, photoluminescence (PL) spectra confirmed that the passivation treatment minimized the surface trap state density and decreased the deep-level defects related to recombination of Cd vacancies. Current-voltage and capacitance-voltage characteristics were measured. It was shown that the passivation treatment could increase the barrier height of the Au/p-CdZnTe contact and decrease the leakage current.",

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AB - The electrical properties of Au/p-CdZnTe contacts with different surface treatments, especially passivation treatment, are investigated in this paper. After the passivation, a TeO2 oxide layer with a thickness of 3.1 nm on the CdZnTe surface was identified by XPS analysis. Meanwhile, photoluminescence (PL) spectra confirmed that the passivation treatment minimized the surface trap state density and decreased the deep-level defects related to recombination of Cd vacancies. Current-voltage and capacitance-voltage characteristics were measured. It was shown that the passivation treatment could increase the barrier height of the Au/p-CdZnTe contact and decrease the leakage current.

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Surface passivation and electrical properties of p-CdZnTe crystal

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