Study on the point defects in Te-riched CdTe crystals

Hui Min Liu; Tao Wang; Yi Hui He; Yan Zhou; Hao Zhang; Ya Dong Xu; Gang Qiang Zha; Wan Qi Jie

Study on the point defects in Te-riched CdTe crystals

Hui Min Liu, Tao Wang, Yi Hui He, Yan Zhou, Hao Zhang, Ya Dong Xu, Gang Qiang Zha, Wan Qi Jie

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

Abstract

In consideration of the possible point defects in Te-riched CdTe crystals, a thermodynamic equilibrium model for CdTe annealed under Te vapor was established based on the defect chemistry theory, native point defects, such as V_Cd, Cd_i, Te_i and Te_Cd were included. Point defects concentration and Fermi level were both calculated using the mass action law and quasi-chemical equations. The results systematically reveal the relationship between the point defects concentration, Fermi level, Te vapor pressure and annealing temperature. The Fermi level was pinned only when Te_Cd concentration was very large.

Original language	English
Pages (from-to)	1885-1890
Number of pages	6
Journal	Rengong Jingti Xuebao/Journal of Synthetic Crystals
Volume	43
Issue number	8
State	Published - 1 Aug 2014

Keywords

CdTe
Defect chemistry
Fermi level
Point defect

Cite this

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title = "Study on the point defects in Te-riched CdTe crystals",

abstract = "In consideration of the possible point defects in Te-riched CdTe crystals, a thermodynamic equilibrium model for CdTe annealed under Te vapor was established based on the defect chemistry theory, native point defects, such as VCd, Cdi, Tei and TeCd were included. Point defects concentration and Fermi level were both calculated using the mass action law and quasi-chemical equations. The results systematically reveal the relationship between the point defects concentration, Fermi level, Te vapor pressure and annealing temperature. The Fermi level was pinned only when TeCd concentration was very large.",

keywords = "CdTe, Defect chemistry, Fermi level, Point defect",

author = "Liu, {Hui Min} and Tao Wang and He, {Yi Hui} and Yan Zhou and Hao Zhang and Xu, {Ya Dong} and Zha, {Gang Qiang} and Jie, {Wan Qi}",

year = "2014",

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language = "英语",

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pages = "1885--1890",

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TY - JOUR

T1 - Study on the point defects in Te-riched CdTe crystals

AU - Liu, Hui Min

AU - Wang, Tao

AU - He, Yi Hui

AU - Zhou, Yan

AU - Zhang, Hao

AU - Xu, Ya Dong

AU - Zha, Gang Qiang

AU - Jie, Wan Qi

PY - 2014/8/1

Y1 - 2014/8/1

N2 - In consideration of the possible point defects in Te-riched CdTe crystals, a thermodynamic equilibrium model for CdTe annealed under Te vapor was established based on the defect chemistry theory, native point defects, such as VCd, Cdi, Tei and TeCd were included. Point defects concentration and Fermi level were both calculated using the mass action law and quasi-chemical equations. The results systematically reveal the relationship between the point defects concentration, Fermi level, Te vapor pressure and annealing temperature. The Fermi level was pinned only when TeCd concentration was very large.

AB - In consideration of the possible point defects in Te-riched CdTe crystals, a thermodynamic equilibrium model for CdTe annealed under Te vapor was established based on the defect chemistry theory, native point defects, such as VCd, Cdi, Tei and TeCd were included. Point defects concentration and Fermi level were both calculated using the mass action law and quasi-chemical equations. The results systematically reveal the relationship between the point defects concentration, Fermi level, Te vapor pressure and annealing temperature. The Fermi level was pinned only when TeCd concentration was very large.

KW - CdTe

KW - Defect chemistry

KW - Fermi level

KW - Point defect

UR - http://www.scopus.com/inward/record.url?scp=84908375899&partnerID=8YFLogxK

M3 - 文章

AN - SCOPUS:84908375899

SN - 1000-985X

VL - 43

SP - 1885

EP - 1890

JO - Rengong Jingti Xuebao/Journal of Synthetic Crystals

JF - Rengong Jingti Xuebao/Journal of Synthetic Crystals

IS - 8

ER -

Study on the point defects in Te-riched CdTe crystals

Abstract

Keywords

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