Study on the behaviors of impurities in cadmium zinc telluride

Tao Wang; Wanqi Jie; Jijun Zhang; Ge Yang; Dongmei Zeng; Yadong Xu; Shuying Ma; Hui Hua; Ke He

doi:10.1016/j.jcrysgro.2007.03.013

Study on the behaviors of impurities in cadmium zinc telluride

Tao Wang, Wanqi Jie, Jijun Zhang, Ge Yang, Dongmei Zeng, Yadong Xu, Shuying Ma, Hui Hua, Ke He

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Impurities in three cadmium zinc telluride (Cd_1-xZn_xTe or CZT) ingots grown by the modified vertical Bridgman (MVB) method were examined by using inductively coupled plasma mass spectrometry (ICP-MS). The distribution and segregation of impurities along the CZT ingots were found to vary with the concentration and the growth conditions. Photoluminescence (PL) and voltage-current measurements were performed to evaluate the effects of the impurities on the optical and electrical properties. The red shift of the (D⁰, X) and DAP positions and the broadening of the DAP band in PL spectrum were observed in the high-impurity CZT ingot. The voltage-current measurement shows a higher resistivity when the impurity concentration was increased. The above results imply that the high-impurity CZT ingot was highly compensated.

Original language	English
Pages (from-to)	313-316
Number of pages	4
Journal	Journal of Crystal Growth
Volume	304
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2007.03.013
State	Published - 15 Jun 2007

Keywords

A1. Impurities
A1. Segregation
A2. Bridgman technique
B1. Semiconducting II-VI materials

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10.1016/j.jcrysgro.2007.03.013

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title = "Study on the behaviors of impurities in cadmium zinc telluride",

abstract = "Impurities in three cadmium zinc telluride (Cd1-xZnxTe or CZT) ingots grown by the modified vertical Bridgman (MVB) method were examined by using inductively coupled plasma mass spectrometry (ICP-MS). The distribution and segregation of impurities along the CZT ingots were found to vary with the concentration and the growth conditions. Photoluminescence (PL) and voltage-current measurements were performed to evaluate the effects of the impurities on the optical and electrical properties. The red shift of the (D0, X) and DAP positions and the broadening of the DAP band in PL spectrum were observed in the high-impurity CZT ingot. The voltage-current measurement shows a higher resistivity when the impurity concentration was increased. The above results imply that the high-impurity CZT ingot was highly compensated.",

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author = "Tao Wang and Wanqi Jie and Jijun Zhang and Ge Yang and Dongmei Zeng and Yadong Xu and Shuying Ma and Hui Hua and Ke He",

year = "2007",

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doi = "10.1016/j.jcrysgro.2007.03.013",

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T1 - Study on the behaviors of impurities in cadmium zinc telluride

AU - Wang, Tao

AU - Jie, Wanqi

AU - Zhang, Jijun

AU - Yang, Ge

AU - Zeng, Dongmei

AU - Xu, Yadong

AU - Ma, Shuying

AU - Hua, Hui

AU - He, Ke

PY - 2007/6/15

Y1 - 2007/6/15

N2 - Impurities in three cadmium zinc telluride (Cd1-xZnxTe or CZT) ingots grown by the modified vertical Bridgman (MVB) method were examined by using inductively coupled plasma mass spectrometry (ICP-MS). The distribution and segregation of impurities along the CZT ingots were found to vary with the concentration and the growth conditions. Photoluminescence (PL) and voltage-current measurements were performed to evaluate the effects of the impurities on the optical and electrical properties. The red shift of the (D0, X) and DAP positions and the broadening of the DAP band in PL spectrum were observed in the high-impurity CZT ingot. The voltage-current measurement shows a higher resistivity when the impurity concentration was increased. The above results imply that the high-impurity CZT ingot was highly compensated.

AB - Impurities in three cadmium zinc telluride (Cd1-xZnxTe or CZT) ingots grown by the modified vertical Bridgman (MVB) method were examined by using inductively coupled plasma mass spectrometry (ICP-MS). The distribution and segregation of impurities along the CZT ingots were found to vary with the concentration and the growth conditions. Photoluminescence (PL) and voltage-current measurements were performed to evaluate the effects of the impurities on the optical and electrical properties. The red shift of the (D0, X) and DAP positions and the broadening of the DAP band in PL spectrum were observed in the high-impurity CZT ingot. The voltage-current measurement shows a higher resistivity when the impurity concentration was increased. The above results imply that the high-impurity CZT ingot was highly compensated.

KW - A1. Impurities

KW - A1. Segregation

KW - A2. Bridgman technique

KW - B1. Semiconducting II-VI materials

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U2 - 10.1016/j.jcrysgro.2007.03.013

DO - 10.1016/j.jcrysgro.2007.03.013

M3 - 文章

AN - SCOPUS:34248581764

SN - 0022-0248

VL - 304

SP - 313

EP - 316

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2

ER -

Study on the behaviors of impurities in cadmium zinc telluride

Abstract

Keywords

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