Abstract
HgInTe single-crystal has been grown by vertical Bridgman method and was investigated by means of X-ray analysis and FT-IR. The results showed that the as-grown crystal was single-phase crystal with high quality. The infrared transmittance in the middle and far infrared region was about 50%-55%. The absorption of the crystal to the infrared light was mainly lattice absorption and free carriers absorption.
Original language | English |
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Pages (from-to) | 870-871+875 |
Journal | Gongneng Cailiao/Journal of Functional Materials |
Volume | 38 |
Issue number | 6 |
State | Published - Jun 2007 |
Keywords
- Crystal growth
- HgInTe
- NIR detector
- Photovoltaic semiconductors
- Vertical Bridgman method