Study on detector grade CdZnTe crystal by low temperature photoluminescence spectrum

Yang Li; Wan Qi Jie; Tao Wang; Fan Yang; Zi Ang Yin; Xi Chen

Study on detector grade CdZnTe crystal by low temperature photoluminescence spectrum

Yang Li, Wan Qi Jie, Tao Wang, Fan Yang, Zi Ang Yin, Xi Chen

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

Abstract

CdZnTe crystal with high resistance for nuclear radiation detector was studied by the technology of low temperature photoluminescence(PL) spectrum. The results show that the three characteristic areas are all related to crystal quality. The FWHM value of (D⁰, X) peak and I_DAP/I_(D0,X) correlate to the lattice integrity and the density of shallow level defects, and D₂ peak is closely related to the dislocation density. Double crystal X-ray rocking curve(DCXRC) and dislocation etch pit density(EPD) are used to confirm the last characterization. High quality CdZnTe wafers demonstrated by low temperature PL spectrum are found possessing higher spectral resolution of manufactured detectors.

Original language	English
Pages (from-to)	321-326+332
Journal	Rengong Jingti Xuebao/Journal of Synthetic Crystals
Volume	43
Issue number	2
State	Published - Feb 2014

Keywords

CdZnTe
Crystal quality
DCXRC
EPD
PL spectrum

Cite this

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title = "Study on detector grade CdZnTe crystal by low temperature photoluminescence spectrum",

abstract = "CdZnTe crystal with high resistance for nuclear radiation detector was studied by the technology of low temperature photoluminescence(PL) spectrum. The results show that the three characteristic areas are all related to crystal quality. The FWHM value of (D0, X) peak and IDAP/I(D0,X) correlate to the lattice integrity and the density of shallow level defects, and D2 peak is closely related to the dislocation density. Double crystal X-ray rocking curve(DCXRC) and dislocation etch pit density(EPD) are used to confirm the last characterization. High quality CdZnTe wafers demonstrated by low temperature PL spectrum are found possessing higher spectral resolution of manufactured detectors.",

keywords = "CdZnTe, Crystal quality, DCXRC, EPD, PL spectrum",

author = "Yang Li and Jie, {Wan Qi} and Tao Wang and Fan Yang and Yin, {Zi Ang} and Xi Chen",

year = "2014",

month = feb,

language = "英语",

volume = "43",

pages = "321--326+332",

journal = "Rengong Jingti Xuebao/Journal of Synthetic Crystals",

issn = "1000-985X",

publisher = "Chinese Ceramic Society",

number = "2",

}

TY - JOUR

T1 - Study on detector grade CdZnTe crystal by low temperature photoluminescence spectrum

AU - Li, Yang

AU - Jie, Wan Qi

AU - Wang, Tao

AU - Yang, Fan

AU - Yin, Zi Ang

AU - Chen, Xi

PY - 2014/2

Y1 - 2014/2

N2 - CdZnTe crystal with high resistance for nuclear radiation detector was studied by the technology of low temperature photoluminescence(PL) spectrum. The results show that the three characteristic areas are all related to crystal quality. The FWHM value of (D0, X) peak and IDAP/I(D0,X) correlate to the lattice integrity and the density of shallow level defects, and D2 peak is closely related to the dislocation density. Double crystal X-ray rocking curve(DCXRC) and dislocation etch pit density(EPD) are used to confirm the last characterization. High quality CdZnTe wafers demonstrated by low temperature PL spectrum are found possessing higher spectral resolution of manufactured detectors.

AB - CdZnTe crystal with high resistance for nuclear radiation detector was studied by the technology of low temperature photoluminescence(PL) spectrum. The results show that the three characteristic areas are all related to crystal quality. The FWHM value of (D0, X) peak and IDAP/I(D0,X) correlate to the lattice integrity and the density of shallow level defects, and D2 peak is closely related to the dislocation density. Double crystal X-ray rocking curve(DCXRC) and dislocation etch pit density(EPD) are used to confirm the last characterization. High quality CdZnTe wafers demonstrated by low temperature PL spectrum are found possessing higher spectral resolution of manufactured detectors.

KW - CdZnTe

KW - Crystal quality

KW - DCXRC

KW - EPD

KW - PL spectrum

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M3 - 文章

AN - SCOPUS:84897522004

SN - 1000-985X

VL - 43

SP - 321-326+332

JO - Rengong Jingti Xuebao/Journal of Synthetic Crystals

JF - Rengong Jingti Xuebao/Journal of Synthetic Crystals

IS - 2

ER -

Study on detector grade CdZnTe crystal by low temperature photoluminescence spectrum

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