Study on chemical polishing of Hg1-xMnxTe wafer

Hao Liang Wang; Xiao Yan Sun; Wan Qi Jie

Study on chemical polishing of Hg_1-xMn_xTe wafer

Hao Liang Wang, Xiao Yan Sun, Wan Qi Jie

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

Abstract

According to the special physical and chemical properties of narrow band semiconductor Hg_1-xMn_xTe, different concentrations of Br₂-MeOH were used for the chemical polishing of Hg_1-xMn_xTe wafers. It was found that in 3%Br₂-MeOH had a stationary erosion rate on Hg_1-xMn_xTe wafer and the process could be easily controlled. The surface scratches were removed and a shiny surface was obtained. Through AFM and SEM analysis, it was proved that the chemical polishing could reduce the surface roughness about 19.8% and remove the surface damaged layers completely. Electronic properties of Hg_1-xMn_xTe wafers before and after chemical polishing were characterized by Van Der Pauw method at 77 K. Results show that the resistivity of the wafers was increased after etching.

Original language	English
Pages (from-to)	662-665
Number of pages	4
Journal	Rengong Jingti Xuebao/Journal of Synthetic Crystals
Volume	37
Issue number	3
State	Published - Jun 2008

Keywords

Erosion rate
HgMnTe
Mean roughness
Resistivity
Surface damaged layers

Cite this

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title = "Study on chemical polishing of Hg1-xMnxTe wafer",

abstract = "According to the special physical and chemical properties of narrow band semiconductor Hg1-xMnxTe, different concentrations of Br2-MeOH were used for the chemical polishing of Hg1-xMnxTe wafers. It was found that in 3%Br2-MeOH had a stationary erosion rate on Hg1-xMnxTe wafer and the process could be easily controlled. The surface scratches were removed and a shiny surface was obtained. Through AFM and SEM analysis, it was proved that the chemical polishing could reduce the surface roughness about 19.8% and remove the surface damaged layers completely. Electronic properties of Hg1-xMnxTe wafers before and after chemical polishing were characterized by Van Der Pauw method at 77 K. Results show that the resistivity of the wafers was increased after etching.",

keywords = "Erosion rate, HgMnTe, Mean roughness, Resistivity, Surface damaged layers",

author = "Wang, {Hao Liang} and Sun, {Xiao Yan} and Jie, {Wan Qi}",

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T1 - Study on chemical polishing of Hg1-xMnxTe wafer

AU - Wang, Hao Liang

AU - Sun, Xiao Yan

AU - Jie, Wan Qi

PY - 2008/6

Y1 - 2008/6

N2 - According to the special physical and chemical properties of narrow band semiconductor Hg1-xMnxTe, different concentrations of Br2-MeOH were used for the chemical polishing of Hg1-xMnxTe wafers. It was found that in 3%Br2-MeOH had a stationary erosion rate on Hg1-xMnxTe wafer and the process could be easily controlled. The surface scratches were removed and a shiny surface was obtained. Through AFM and SEM analysis, it was proved that the chemical polishing could reduce the surface roughness about 19.8% and remove the surface damaged layers completely. Electronic properties of Hg1-xMnxTe wafers before and after chemical polishing were characterized by Van Der Pauw method at 77 K. Results show that the resistivity of the wafers was increased after etching.

AB - According to the special physical and chemical properties of narrow band semiconductor Hg1-xMnxTe, different concentrations of Br2-MeOH were used for the chemical polishing of Hg1-xMnxTe wafers. It was found that in 3%Br2-MeOH had a stationary erosion rate on Hg1-xMnxTe wafer and the process could be easily controlled. The surface scratches were removed and a shiny surface was obtained. Through AFM and SEM analysis, it was proved that the chemical polishing could reduce the surface roughness about 19.8% and remove the surface damaged layers completely. Electronic properties of Hg1-xMnxTe wafers before and after chemical polishing were characterized by Van Der Pauw method at 77 K. Results show that the resistivity of the wafers was increased after etching.

KW - Erosion rate

KW - HgMnTe

KW - Mean roughness

KW - Resistivity

KW - Surface damaged layers

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SN - 1000-985X

VL - 37

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EP - 665

JO - Rengong Jingti Xuebao/Journal of Synthetic Crystals

JF - Rengong Jingti Xuebao/Journal of Synthetic Crystals

IS - 3

ER -

Study on chemical polishing of Hg_1-xMn_xTe wafer

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Keywords

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