TY - GEN
T1 - Single mask selective release process for complex SOI MEMS device
AU - Xie, Jianbing
AU - Hao, Yongcun
AU - Chang, Honglong
AU - Yuan, Weizheng
PY - 2013
Y1 - 2013
N2 - We present a single mask selective release process for complex SOI MEMS device. Comparing to the one-step dry release process, there are two improvements, the first one is to ensure that the bottom of the suspension beams will not be notching, and have sufficient strength and rigidity, the second one is to ensure that the released structures will not be damaged during wafer dicing. According to the proposed design rules, in the dry release step, most of the device area is released, except the boundaries of the proof mass and the suspension beams. Then, in the wet release step, all the structures will be released, and also increased the gap below the structure. So the suspension beams is protect enabled that the device has sufficient rigidity and not easy to break. To verify this method, a micromachined gyroscope is fabricated and test.
AB - We present a single mask selective release process for complex SOI MEMS device. Comparing to the one-step dry release process, there are two improvements, the first one is to ensure that the bottom of the suspension beams will not be notching, and have sufficient strength and rigidity, the second one is to ensure that the released structures will not be damaged during wafer dicing. According to the proposed design rules, in the dry release step, most of the device area is released, except the boundaries of the proof mass and the suspension beams. Then, in the wet release step, all the structures will be released, and also increased the gap below the structure. So the suspension beams is protect enabled that the device has sufficient rigidity and not easy to break. To verify this method, a micromachined gyroscope is fabricated and test.
KW - MEMS
KW - Notching
KW - Selective release
KW - Silicon on insulator (SOI)
KW - Single mask
UR - http://www.scopus.com/inward/record.url?scp=84883731412&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/KEM.562-565.1116
DO - 10.4028/www.scientific.net/KEM.562-565.1116
M3 - 会议稿件
AN - SCOPUS:84883731412
SN - 9783037857397
T3 - Key Engineering Materials
SP - 1116
EP - 1121
BT - Micro-Nano Technology XIV
PB - Trans Tech Publications Ltd
T2 - 14th Annual Conference and the 3rd International Conference of the Chinese Society of Micro-Nano Technology, CSMNT 2012
Y2 - 4 November 2012 through 7 November 2012
ER -